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MBRF1550CT-HE3/45 PDF预览

MBRF1550CT-HE3/45

更新时间: 2024-11-18 15:40:55
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
5页 494K
描述
DIODE 7.5 A, 50 V, SILICON, RECTIFIER DIODE, TO-220AB, ROHS COMPLIANT, PLASTIC, ITO-220AB, 3 PIN, Rectifier Diode

MBRF1550CT-HE3/45 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:TO-220AB
包装说明:ROHS COMPLIANT, PLASTIC, ITO-220AB, 3 PIN针数:3
Reach Compliance Code:unknown风险等级:5.7
Base Number Matches:1

MBRF1550CT-HE3/45 数据手册

 浏览型号MBRF1550CT-HE3/45的Datasheet PDF文件第2页浏览型号MBRF1550CT-HE3/45的Datasheet PDF文件第3页浏览型号MBRF1550CT-HE3/45的Datasheet PDF文件第4页浏览型号MBRF1550CT-HE3/45的Datasheet PDF文件第5页 
MBR(F,B)1535CT thru MBR(F,B)1560CT  
Vishay General Semiconductor  
Dual Common-Cathode Schottky Rectifier  
FEATURES  
ITO-220AB  
TO-220AB  
• Guardring for overvoltage protection  
• Lower power losses, high efficiency  
• Low forward voltage drop  
• High forward surge capability  
• High frequency operation  
3
3
2
2
1
1
• Meets MSL level 1, per J-STD-020, LF maximum  
peak of 245 °C (for TO-263AB package)  
MBR15xxCT  
MBRF15xxCT  
PIN 1  
PIN 2  
CASE  
PIN 1  
PIN 2  
PIN 3  
• Solder dip 260 °C, 40 s (for TO-220AB and  
ITO-220AB package)  
PIN 3  
TO-263AB  
K
• Component in accordance to RoHS 2002/95/EC  
and WEEE 2002/96/EC  
2
TYPICAL APPLICATIONS  
1
For use in high frequency rectifier of switching mode  
power supplies, freewheeling diodes, dc-to-dc  
converters or polarity protection application.  
MBRB15xxCT  
PIN 1  
K
PIN 2  
HEATSINK  
MECHANICAL DATA  
Case: TO-220AB, ITO-220AB, TO-263AB  
Epoxy meets UL 94V-0 flammability rating  
PRIMARY CHARACTERISTICS  
IF(AV)  
VRRM  
IFSM  
7.5 A x 2  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD22-B102  
E3 suffix for consumer grade, meets JESD 201 class  
1A whisker test, HE3 suffix for high reliability grade  
(AEC Q101 qualified), meets JESD 201 class 2  
whisker test  
35 V to 60 V  
150 A  
0.57 V, 0.65 V  
150 °C  
VF  
TJ max.  
Polarity: As marked  
Mounting Torque: 10 in-lbs maximum  
MAXIMUM RATINGS (T = 25 °C unless otherwise noted)  
C
PARAMETER  
SYMBOL MBR1535CT MBR1545CT MBR1550CT MBR1560CT UNIT  
Maximum repetitive peak reverse voltage  
Working peak reverse voltage  
Maximum DC blocking voltage  
VRRM  
VRWM  
VDC  
35  
35  
35  
45  
45  
45  
50  
50  
50  
60  
60  
60  
V
V
V
Maximum average forward rectified  
current at TC = 105 °C  
total device  
per diode  
15  
7.5  
IF(AV)  
IFSM  
IRRM  
A
A
A
Peak forward surge current 8.3 ms single half sine-wave  
superimposed on rated load per diode  
150  
Peak repetitive reverse surge current per diode at  
tp = 2.0 µs, 1 kHz  
1.0  
0.5  
Voltage rate of change (rated VR)  
dV/dt  
TJ  
10 000  
V/µs  
°C  
Operating junction temperature range  
- 65 to + 150  
Document Number: 88670  
Revision: 08-Nov-07  
For technical questions within your region, please contact one of the following:  
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com  
www.vishay.com  
1

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