MBRD835L-T

更新时间： 2024-02-05 05:55:46

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MBRD835L-T 数据手册

MBRD835L

8A LOW VF SCHOTTKY BARRIER RECTIFIER

Features

ꢀ

Guard Ring Die Construction for

Transient Protection

ꢀ

Low Power Loss, High Efficiency

High Surge Capability

DPAK

Min

6.3

ꢃ

Max

6.7

Dim

Very Low Forward Voltage Drop

For Use in Low Voltage, High Frequency

Inverters, Free Wheeling, and Polarity

Protection Applications

0.3

0.8

ꢀ

Plastic Material: UL Flammability

Classification Rating 94V-0

2.3 Nominal

2.1

0.4

1.2

5.3

2.5

0.6

1.6

5.7

Mechanical Data

0.5 Nominal

ꢀ

Case: DPAK Molded Plastic

1.3

1.0

5.1

1.8

ꢃ

Terminals: Solderable per MIL-STD-202,

Method 208

PIN 1

PIN 3

5.5

PIN 4, BOTTOMSIDE

HEAT SINK

ꢀ

Polarity: See Diagram

All Dimensions in mm

Marking: Type Number

Weight: 0.4 grams (approx.)

Note:

Pins 1 & 3 must be electrically

connected at the printed circuit board.

@ T_A= 25ꢁC unless otherwise specified

Maximum Ratings

Single phase, half wave, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

Value

Characteristic

Symbol

Unit

V_RRM

V_RWM

V_R

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

V_R(RMS)

I_F(AV)

RMS Reverse Voltage

Average Rectified Forward Current

@ T_C= 88ꢁC

Non-Repetitive Peak Forward Surge Current

8.3ms Single half sine-wave Superimposed on Rated Load

(JEDEC Method)

I_FSM

R_ꢂJC

R_ꢂJA

T_j

Typical Thermal Resistance Junction to Case (Note 2)

Typical Thermal Resistance Junction to Ambient (Note 2)

Operating Temperature Range

6.0

ꢁC/W

ꢁC

-65 to +125

-65 to +150

T_STG

Storage Temperature Range

°C

@ T_A= 25ꢁC unless otherwise specified

Electrical Characteristics

Min

Typ

Max

Unit

Characteristic

Symbol

Test Condition

V_(BR)R

I_R= 1mA

Reverse Breakdown Voltage (Note 1)

ꢃ

I_F= 8A, T_S= 25ꢁC

I_F= 8A, T_S= 125ꢁC

ꢃ

0.48

ꢃ

0.51

0.41

V_FM

Forward Voltage (Note 1)

T_S= 25ꢁC, V_R= 35V

T_S= 100ꢁC, V_R= 35V

ꢃ

0.1

ꢃ

1.4

I_RM

C_j

Peak Reverse Current (Note 1)

Junction Capacitance

f = 1.0MHz, V_R= 4.0V DC

ꢃ

600

ꢃ

Notes:

1. Short duration test pulse used to minimize self-heating effect.

2. Mounted on PC board with 14mm (.013mm thick) copper pad areas.

DS30284 Rev. B-2

1 of 2

MBRD835L

中文翻译

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MBRD835L-T 替代型号

型号	品牌	替代类型	描述	数据表
MBRD835L	ONSEMI	完全替代	SWITCHMODE Power Rectifier
SBRD8835LT4G	ONSEMI	类似代替	SWITCHMODE Power Rectifier
SBRD8835LG	ONSEMI	类似代替	SWITCHMODE Power Rectifier

与MBRD835L-T相关器件

型号	品牌	获取价格	描述	数据表
MBRD835LT4	ONSEMI	获取价格	SWITCHMODE Power Rectifier
MBRD835LT4G	ONSEMI	获取价格	SWITCHMODE Power Rectifier
MBRD835R	SWST	获取价格	肖特基整流管
MBRD840	SHIKUES	获取价格	SCHOTTKY BARRIER RECTIFIERS
MBRD840	WON-TOP	获取价格	SMD
MBRD840D	MDD	获取价格	SCHOTTKY BARRIER GLASS PASSIVATED RECTIFIERS
MBRD840S	WON-TOP	获取价格	SMD
MBRD840S-T3	WTE	获取价格	Rectifier Diode, Schottky, 1 Phase, 1 Element, 8A, 40V V(RRM), Silicon, TO-252, DPAK-3/2
MBRD840S-T3-LF	WTE	获取价格	Rectifier Diode, Schottky, 1 Phase, 1 Element, 8A, 40V V(RRM), Silicon, TO-252, DPAK-3/2
MBRD840T	MDD	获取价格	SCHOTTKY BARRIER GLASS PASSIVATED RECTIFIERS

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