Datasheet > MBRD580TR

MBRD580TR

更新时间： 2022-09-29 19:45:47

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描述
DIODE SCHOTTKY 80V 5A DPAK

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数据手册

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MBRD580TR 数据手册

MBRD560

THRU

MBRD5200

Technical Data

Data Sheet N0801, Rev. A

MBRD560 THRU MBRD5200

SCHOTTKY RECTIFIER

Features



150℃ T_Joperation

Center tap configuration

Low forward voltage drop

High purity, high temperature epoxy encapsulation for

enhanced mechanical strength and moisture resistance

High frequency operation



Guard ring for enhanced ruggedness and long term

reliability



“-A” is an AEC-Q101 qualified device

This is a Pb − Free Device

All SMC parts are traceable to the wafer lot

Additional testing can be offered upon request

DPAK

Circuit Diagram

Applications



Disk drives



Switching power supply

Converters

Free-Wheeling diodes

Reverse battery protection

Battery charging



Maximum Ratings and Electrical characteristics @T_A= 25°C unless otherwise specified

MBRD

560

MBRD

580

MBRD

5100

MBRD

5150

MBRD

5200

Characteristics

Symbol

Units

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

V_RRM

V_RWM

V_R

100

150

200

Max. Average Forward Current

I_F(AV)

I_FSM

Max. Peak One Cycle Non-Repetitive Surge

Current(8.3ms Single half sine-wave)

120

V_F

I_R

0.65

0.75

300

0.85

0.90

0.92

Max. Forward Voltage Drop @5A, 25C

Max. Reverse Current @VRWM, 25C

Max. Junction Capacitance(Note1)

Max. Junction Temperature

C_T

T_J

150

-55 to +150



Max. Storage Temperature

T_stg

C

C/W

Typical Thermal Resistance Junction to Case

(DC operation)

6.0



R_JC

Approximate Weight

Case Style

0.39

DPAK

* Pulse width < 300 µs, duty cycle < 2%

Note1: Measured at 1.0 MHz and applied reverse voltage of 5.0V D.C.

 China - Germany - Korea - Singapore - United States 

 http://www.smc-diodes.com - sales@ smc-diodes.com 

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