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MBRB2535CTTRR PDF预览

MBRB2535CTTRR

更新时间: 2024-11-25 11:11:31
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
6页 126K
描述
Schottky Rectifier, 2 x 15 A

MBRB2535CTTRR 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:TO-263包装说明:R-PSSO-G2
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.32其他特性:FREEWHEELING DIODE, HIGH RELIABILITY
应用:GENERAL PURPOSE外壳连接:CATHODE
配置:COMMON CATHODE, 2 ELEMENTS二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):0.73 V
JESD-30 代码:R-PSSO-G2湿度敏感等级:1
最大非重复峰值正向电流:150 A元件数量:2
相数:1端子数量:2
最高工作温度:150 °C最大输出电流:15 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):225
认证状态:Not Qualified最大重复峰值反向电压:35 V
子类别:Rectifier Diodes表面贴装:YES
技术:SCHOTTKY端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

MBRB2535CTTRR 数据手册

 浏览型号MBRB2535CTTRR的Datasheet PDF文件第2页浏览型号MBRB2535CTTRR的Datasheet PDF文件第3页浏览型号MBRB2535CTTRR的Datasheet PDF文件第4页浏览型号MBRB2535CTTRR的Datasheet PDF文件第5页浏览型号MBRB2535CTTRR的Datasheet PDF文件第6页 
MBRB25..CT/MBR25..CT-1  
Vishay High Power Products  
Schottky Rectifier, 2 x 15 A  
FEATURES  
MBR25..CT-1  
MBRB25..CT  
• 150 °C TJ operation  
• Center tap D2PAK and TO-262 packages  
• Low forward voltage drop  
• High frequency operation  
Base  
common  
cathode  
Base  
common  
cathode  
• High purity, high temperature epoxy encapsulation for  
enhanced mechanical strength and moisture resistance  
2
2
• Guard ring for enhanced ruggedness and long term  
reliability  
• Designed and qualified for Q101 level  
2
2
DESCRIPTION  
1
1
3
3
Common  
cathode  
Common  
cathode  
Anode  
Anode  
Anode  
Anode  
This center tap Schottky rectifier has been optimized for low  
reverse leakage at high temperature. The proprietary barrier  
technology allows for reliable operation up to 150 °C junction  
temperature. Typical applications are in switching power  
supplies, converters, freewheeling diodes, and reverse  
battery protection.  
D2PAK  
TO-262  
PRODUCT SUMMARY  
IF(AV)  
2 x 15 A  
35/45 V  
VR  
IRM  
40 mA at 125 °C  
MAJOR RATINGS AND CHARACTERISTICS  
SYMBOL  
IF(AV)  
IFRM  
CHARACTERISTICS  
Rectangular waveform (per device)  
TC = 130 °C (per leg)  
VALUES  
30  
UNITS  
A
30  
VRRM  
IFSM  
35/45  
1060  
V
A
tp = 5 µs sine  
30 Apk, TJ = 125 °C  
Range  
VF  
0.73  
V
TJ  
- 65 to 150  
°C  
VOLTAGE RATINGS  
MBRB2535CT  
MBR2535CT-1  
MBRB2545CT  
MBR2545CT-1  
PARAMETER  
SYMBOL  
UNITS  
Maximum DC reverse voltage  
VR  
35  
45  
V
Maximum working peak reverse voltage  
VRWM  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
IF(AV)  
IFRM  
TEST CONDITIONS  
TC = 130 °C, rated VR  
VALUES UNITS  
per leg  
15  
30  
30  
Maximum average  
forward current  
per device  
Peak repetitive forward current per leg  
Rated VR, square wave, 20 kHz, TC = 130 °C  
Following anyrated loadcondition  
and with rated VRRM applied  
A
5 µs sine or 3 µs rect. pulse  
1060  
Non-repetitive peak surge current  
IFSM  
Surge applied at rated load conditions halfwave,  
single phase, 60 Hz  
150  
Non-repetitive avalanche energy per leg  
Repetitive avalanche current per leg  
EAS  
IAR  
TJ = 25 °C, IAS = 2 A, L = 8 mH  
16  
2
mJ  
A
Current decaying linearly to zero in 1 µs  
Frequency limited by TJ maximum VA = 1.5 x VR typical  
Document Number: 93979  
Revision: 21-Aug-08  
For technical questions, contact: diodes-tech@vishay.com  
www.vishay.com  
1

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