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MBRB2080TRLPBF PDF预览

MBRB2080TRLPBF

更新时间: 2024-11-18 20:27:11
品牌 Logo 应用领域
威世 - VISHAY 二极管
页数 文件大小 规格书
6页 133K
描述
Rectifier Diode, Schottky, 1 Phase, 2 Element, 20A, 80V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, D2PAK-3

MBRB2080TRLPBF 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:TO-263
包装说明:R-PSSO-G2针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.62
应用:GENERAL PURPOSE外壳连接:CATHODE
配置:COMMON CATHODE, 2 ELEMENTS二极管元件材料:SILICON
二极管类型:RECTIFIER DIODEJESD-30 代码:R-PSSO-G2
最大非重复峰值正向电流:850 A元件数量:2
相数:1端子数量:2
最高工作温度:150 °C最低工作温度:-65 °C
最大输出电流:20 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
最大重复峰值反向电压:80 V表面贴装:YES
技术:SCHOTTKY端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

MBRB2080TRLPBF 数据手册

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MBRB2080/90/100CTPbF, MBR2080/90/100CT-1PbF  
Vishay High Power Products  
Schottky Rectifier,  
2 x 10 A  
FEATURES  
MBR20..CT-1PbF  
MBRB20..CTPbF  
• 150 °C TJ operation  
• Low forward voltage drop  
• High frequency operation  
• Center tap D2PAK and TO-262 packages  
Base  
Base  
• High purity, high temperature epoxy encapsulation for  
enhanced mechanical strength and moisture resistance  
common  
cathode  
common  
cathode  
2
2
• Guard ring for enhanced ruggedness and long term  
reliability  
• Lead (Pb)-free  
• Designed and qualified for Q101 level  
2
2
1
1
3
3
Common  
cathode  
Common  
cathode  
Anode  
Anode  
Anode  
Anode  
DESCRIPTION  
D2PAK  
TO-262  
This center tap Schottky rectifier has been optimized for low  
reverse leakage at high temperature. The proprietary barrier  
technology allows for reliable operation up to 150 °C  
junction temperature. Typical applications are in switching  
power supplies, converters, freewheeling diodes, and  
reverse battery protection.  
PRODUCT SUMMARY  
IF(AV)  
2 x 10 A  
VR  
80 to 100 V  
MAJOR RATINGS AND CHARACTERISTICS  
SYMBOL  
IF(AV)  
IFRM  
CHARACTERISTICS  
Rectangular waveform (per device)  
TC = 133 °C (per leg)  
VALUES  
20  
UNITS  
A
20  
VRRM  
IFSM  
80 to 100  
850  
V
A
tp = 5 µs sine  
10 Apk, TJ = 125 °C  
Range  
VF  
0.70  
V
TJ  
- 65 to 150  
°C  
VOLTAGE RATINGS  
MBRB2080CTPbF  
MBR2080CT-1PbF  
MBRB2090CTPbF  
MBR2090CT-1PbF  
MBRB20100CTPbF  
MBR20100CT-1PbF  
PARAMETER  
SYMBOL  
UNITS  
Maximum DC reverse voltage  
VR  
80  
90  
100  
V
Maximum working peak reverse voltage  
VRWM  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
IF(AV)  
IFRM  
TEST CONDITIONS  
TC = 133 °C, rated VR  
Rated VR, square wave, 20 kHz, TC = 133 °C  
VALUES  
UNITS  
per leg  
10  
20  
20  
Maximum average  
forward current  
per device  
Peak repetitive forward current per leg  
5 µs sine or 3 µs rect.  
pulse  
Following any rated load ondition  
and with rated VRRM applied  
A
850  
150  
Non-repetitive peak surge current  
IFSM  
Surge applied at rated load conditions halfwave,  
single phase, 60 Hz  
Peak repetitive reverse surge current  
Non-repetitive avalanche energy per leg  
IRRM  
EAS  
2.0 µs, 1.0 kHz  
0.5  
24  
TJ = 25 °C, IAS = 2 A, L = 12 mH  
mJ  
* Pb containing terminations are not RoHS compliant, exemptions may apply  
Document Number: 94306  
Revision: 01-Dec-08  
For technical questions, contact: diodes-tech@vishay.com  
www.vishay.com  
1

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