Datasheet > MBRB2050CT-HE3/45

MBRB2050CT-HE3/45

更新时间： 2023-01-02 16:38:37

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
5页	502K
描述
DIODE 10 A, 50 V, SILICON, RECTIFIER DIODE, TO-263AB, ROHS COMPLIANT, PLASTIC PACKAGE-3, Rectifier Diode

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MBRB2050CT-HE3/45 数据手册

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MBR(F,B)2035CT thru MBR(F,B)2060CT

Vishay General Semiconductor

Dual Common-Cathode Schottky Rectifier

FEATURES

TO-220AB

ITO-220AB

• Guardring for overvoltage protection

• Lower power losses, high efficiency

• Low forward voltage drop

• High forward surge capability

• High frequency operation

• Meets MSL level 1, per J-STD-020, LF maximum

peak of 245 °C (for TO-263AB package)

MBR20xxCT

MBRF20xxCT

PIN 1

PIN 2

CASE

PIN 1

PIN 2

• Solder dip 260 °C, 40 s (for TO-220AB and

ITO-220AB package)

PIN 3

TO-263AB

• Component in accordance to RoHS 2002/95/EC

and WEEE 2002/96/EC

TYPICAL APPLICATIONS

For use in low voltage, high frequency rectifier of

switching mode power supplies, freewheeling diodes,

dc-to-dc converters or polarity protection application.

MBRB20xxCT

PIN 1

PIN 2

HEATSINK

MECHANICAL DATA

Case: TO-220AB, ITO-220AB, TO-263AB

Epoxy meets UL 94V-0 flammability rating

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD22-B102

E3 suffix for consumer grade, meets JESD 201 class

1A whisker test, HE3 suffix for high reliability grade

(AEC Q101 qualified), meets JESD 201 class 2

whisker test

PRIMARY CHARACTERISTICS

I_F(AV)

V_RRM

I_FSM

10 A x 2

35 V to 60 V

150 A

0.57 V, 0.70 V

150 °C

V_F

T_Jmax.

Polarity: As marked

Mounting Torque: 10 in-lbs maximum

MAXIMUM RATINGS (T = 25 °C unless otherwise noted)

PARAMETER

SYMBOL MBR2035CT

MBR2045CT

MBR2050CT

MBR2060CT

UNIT

Maximum repetitive peak reverse voltage

Working peak reverse voltage

V_RRM

V_RWM

V_DC

Maximum DC blocking voltage

Maximum average forward rectified total device

I_F(AV)

I_FSM

I_RRM

current at T_C= 135 °C

per diode

Peak forward surge current 8.3 ms single half

sine-wave superimposed on rated load per diode

150

Peak repetitive reverse surge current per diode at

t_p= 2 µs, 1 kHz

1.0

0.5

Voltage rate of change (rated V_R)

Operating junction temperature range

Storage temperature range

dV/dt

T_J

10 000

V/µs

°C

- 65 to + 150

- 65 to + 175

T_STG

°C

Isolation voltage (ITO-220AB only)

from terminal to heatsink t = 1 min

V_AC

1500

Document Number: 88674

Revision: 08-Nov-07

For technical questions within your region, please contact one of the following:

PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com

www.vishay.com

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