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MBR40200PTR PDF预览

MBR40200PTR

更新时间： 2024-11-02 00:46:43
品牌 Logo 应用领域
THINKISEMI /
页数 文件大小 规格书
2页 401K
描述
40.0 Amperes Heat Sink Dual Common Anode Schottky Half Bridge Rectifiers

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MBR40200PTR 数据手册

 浏览型号MBR40200PTR的Datasheet PDF文件第2页 
MBR4035PTR thru MBR40200PTR  
®
MBR4035PTR thru MBR40200PTR  
Pb Free Plating Product  
40.0 Amperes Heat Sink Dual Common Anode Schottky Half Bridge Rectifiers  
TO-3PN/TO-3PB  
Features  
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
Standard MBR matured technology with high reliablity  
Bottom Side Metal Heat Sink  
Low forward voltage drop  
High current capability  
Low reverse leakage current  
High surge current capability  
Application  
Automotive Inverters and Solar Inverters  
ꢀ
ꢀ
ꢀ
Plating Power Supply,SMPS,EPS and UPS  
Car Audio Amplifiers and Sound Device Systems  
Mechanical Data  
Case: Heatsink TO-3PN/TO-3PB  
ꢀ
ꢀ
ꢀ
Epoxy: UL 94V-0 rate flame retardant  
Terminals: Solderable per MIL-STD-202  
method 208  
Case  
Case  
Case  
Case  
ꢀ
ꢀ
ꢀ
Polarity: As marked on diode body  
Mounting position: Any  
Weight: 2.1 gram approximately  
Doubler  
Series  
Negative  
Positive  
Common Cathode Common Anode Tandem Polarity Tandem Polarity  
Suffix "PTS"  
Suffix "PT"  
Suffix "PTR"  
Suffix "PTD"  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25℃ unless otherwise noted)  
MBR MBR MBR MBR MBR  
MBR  
MBR  
MBR  
PARAMETER  
SYMBOL 4035 4045 4050 4060 4090 40100 40150 40200 UNIT  
PTR  
35  
PTR  
45  
PTR  
50  
PTR  
60  
PTR  
90  
PTR  
100  
70  
PTR  
150  
105  
150  
PTR  
200  
140  
200  
Maximum repetitive peak reverse voltage  
Maximum RMS voltage  
VRRM  
VRMS  
VDC  
V
V
V
A
24  
31  
35  
42  
63  
Maximum DC blocking voltage  
35  
45  
50  
60  
90  
100  
Maximum average forward rectified current  
IF(AV)  
40  
40  
Peak repetitive forward current  
(Rated VR, Square wave, 20KHz)  
IFRM  
A
Peak forward surge current, 8.3 ms single half sine-wave  
superimposed on rated load  
IFSM  
IRRM  
330  
A
A
Peak repetitive reverse surge Current (Note 1)  
2
1
Maximum instantaneous forward voltage (Note 2)  
IF=20A, TJ=25℃  
0.75  
0.65  
0.80  
0.75  
0.77  
0.84  
0.74  
-
0.90  
0.80  
1.01  
-
IF=20A, TJ=125℃  
VF  
0.67  
V
IF=40A, TJ=25℃  
-
-
IF=40A, TJ=125℃  
-
1.0  
0.5  
0.1  
Maximum reverse current @ rated VR TJ=25 ℃  
TJ=125 ℃  
IR  
mA  
30  
20  
10  
Voltage rate of change (Rated VR)  
Typical thermal resistance  
10,000  
1.2  
dV/dt  
RθJC  
TJ  
V/μs  
℃
/W  
℃
Operating junction temperature range  
Storage temperature range  
- 55 to + 150  
- 55 to + 150  
TSTG  
℃
Note 1: 2.0μs Pulse Width, f=1.0KHz  
Note 2: Pulse Test : 300μs Pulse Width, 1% Duty Cycle  
Rev.07C  
© 2006 Thinki Semiconductor Co., Ltd.  
Page 1/2  
http://www.thinkisemi.com/  
12

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