Datasheet > MBR3040CT-J

MBR3040CT-J

更新时间： 2024-11-25 00:59:03

品牌	Logo	应用领域
鲁光 - LGE		/
页数	文件大小	规格书
3页	1650K
描述
30A High Power Schottky Barrier Rectifiers

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MBR3040CT-J 数据手册

MBR3040CT-J THRU MBR30200CT-J

30A High Power Schottky Barrier Rectifiers

■ Features

■ Outline

• Low power loss, high efficiency.

TO-220AB

• High current capability, low forward voltage drop.

• High surge capability.

• Guardring for overvoltage protection.

•Ultra high-speed switching.

0.420(10.66)

0.386(9.80)

0.197(5.0)MAX

0.055(1.40)

0.043(1.10)

•Silicon epitaxial planar chip, metal silicon junction. Suffix "H"

i•ndicates Halogen-free part, ex.MBR3040CTH-J. Lead-free

p• arts meet environmental standards of

MIL-STD-19500 /228

0.226(5.75)MIN

0.624(15.87)MAX

0.155(3.94)

MAX

Marking code

0.115(2.92)

0.081(2.05)

0.054(1.37)

MAX

0.038(0.96)

0.020(0.50)

0.500(12.70)MIN

■ Mechanical data

0.250(6.35)

MIN

• Epoxy : UL94-V0 rated flame retardant.

• Case : JEDEC TO-220AB molded plastic body over

passivated chip.

0.110(2.80)

0.091(2.30)

0.028(0.70)

0.011(0.28)

• Lead : Axial leads, solderable per MIL-STD-202,

Method 208 guranteed.

PIN 1

PIN 3

PIN 2

• Polarity: Color band denotes cathode end.

• Mounting Position : Any.

Dimensions in inches and (millimeters)

• Weight : Approximated 2.25 gram.

■ Maximum ratings and electrical characteristics

Rating at 25^OC ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

Parameter

Conditions

Symbol

I_O

MIN.

TYP.

MAX.

UNIT

Forward rectified current

See Fig.1

8.3ms single half sine-wave superimposed on

rate load (JEDEC method)

Forward surge current

I_FSM

200

V_R= V_RRMT_A= 25^OC

V_R= V_RRMT_A= 125^OC

0.1

I_R

Reverse current

C_J

Diode junction capacitance

Thermal resistance

f=1MHz and applied 4V DC reverse voltage

Junction to ambient

150

^OC/W

^OC

R_θJA

T_STG

Storage temperature

-55

+175

Max.

RMS voltage

V_RMS(V)

Max. DC

blocking voltage

V_R(V)

Operating

temperature

T_J(^OC)

forward voltage

repetitive peak

reverse voltage

V_RRM(V)

Symbol

Marking code

@15A, T_A= 25^OC @15A, T_A= 125^OC

V_F(V)

MBR3040CT

MBR3045CT

MBR3060CT

MBR3065CT

MBR30100CT

MBR30150CT

MBR30200CT

31.5

MBR3040CT-J

MBR3045CT-J

MBR3060CT-J

MBR3065CT-J

MBR30100CT-J

MBR30150CT-J

MBR30200CT-J

0.70

0.57

-55 ~ +150

-55 ~ +175

0.79

0.70

45.5

100

150

200

100

150

200

0.81

0.87

0.90

0.71

0.77

0.80

105

140

http://www.lgesemi.com

mail:lge@lgesemi.com

Revision:20170701-P1

12 3

中文翻译

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与MBR3040CT-J相关器件

型号	品牌	获取价格	描述	数据表
MBR3040F	ASEMI	获取价格	Dual High-Voltage Schottky Rectifiers
MBR3040F	SECOS	获取价格	30Amp Schottky Barrier Rectifiers
MBR3040F-C	SECOS	获取价格	30Amp Schottky Barrier Rectifiers
MBR3040FCT	CTC	获取价格	SCHOTTKY BARRIER RECTIFIERS
MBR3040FCT	KERSEMI	获取价格	30 Amp Schottky Barrier Rectifier 20 to 100 Volts
MBR3040FCT	MCC	获取价格	30 Amp Schottky Barrier Rectifier 20 to 100 Volts
MBR3040FCT	PANJIT	获取价格	SCHOTTKY BARRIER RECTIFIERS
MBR3040FCT	ANBON	获取价格	ITO-220AB
MBR3040FCT_16	PANJIT	获取价格	SCHOTTKY BARRIER RECTIFIERS
MBR3040FCT_T0_00001	PANJIT	获取价格	SCHOTTKY BARRIER RECTIFIERS

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