Datasheet > MBR2035CT-Y

MBR2035CT-Y

更新时间： 2022-02-26 09:56:52

品牌	Logo	应用领域
TSC		/
页数	文件大小	规格书
4页	214K
描述
Dual Common Cathode Schottky Rectifier

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

MBR2035CT-Y 数据手册

MBR2035CT-Y thru MBR20200CT-Y

Taiwan Semiconductor

CREAT BY ART

Dual Common Cathode Schottky Rectifier

FEATURES

- Low power loss, high efficiency

- Guardring for overvoltage protection

- High surge current capability

- Compliant to RoHS Directive 2011/65/EU and

in accordance to WEEE 2002/96/EC

- Halogen-free according to IEC 61249-2-21 definition

TO-220AB

MECHANICAL DATA

Case: TO-220AB

Molding compound, UL flammability classification rating 94V-0

Base P/N with suffix "G" on packing code - green compound (halogen-free)

Terminal: Matte tin plated leads, solderable per JESD22-B106

Meet JESD 201 class 1A whisker test

Polarity: As marked

Mounting torque: 5 in-lbs maximum

Weight: 1.88 g (approximately)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T_A=25℃ unless otherwise noted)

MBR

PARAMETER

SYMBOL 2035 2045 2050 2060 2090 20100 20150 20200 UNIT

CT-Y CT-Y CT-Y CT-Y CT-Y CT-Y CT-Y CT-Y

MBR

2035

MBR

2045

MBR

2050

MBR

2060

MBR

2090

MBR

Marking code

20100 20150 20200

Maximum repetitive peak reverse voltage

Maximum RMS voltage

V_RRM

V_RMS

V_DC

100

150

105

150

200

140

200

Maximum DC blocking voltage

100

Maximum average forward rectified current

I_F(AV)

Peak repetitive forward current

(Rated VR, Square wave, 20KHz)

I_FRM

Peak forward surge current, 8.3 ms single half sine-wave

superimposed on rated load

I_FSM

I_RRM

150

Peak repetitive reverse surge current (Note 1)

0.5

Maximum instantaneous forward voltage (Note 2)

I_F=10A, T_J=25℃

0.80

0.70

0.95

0.85

0.75

0.95

0.85

0.99

0.87

1.23

1.10

I_F=10A, T_J=125℃

V_F

0.57

0.84

0.72

I_F=20A, T_J=25℃

I_F=20A, T_J=125℃

0.1

Maximum reverse current @ rated VR T_J=25 ℃

T_J=125 ℃

I_R

0.15

Voltage rate of change (Rated V_R)

Typical thermal resistance

10000

dV/dt

R_θJC

T_J

V/μs

^OC/W

^OC

1.0

2.0

Operating junction temperature range

Storage temperature range

- 55 to +150

^OC

T_STG

Note 1: tp = 2.0 μs, 1.0KHz

Note 2: Pulse test with PW=300μs, 1% duty cycle

Document Number: DS_D1405043

Version:A14

12 3 4

中文翻译

下载PDF

与MBR2035CT-Y相关器件

型号	品牌	获取价格	描述	数据表
MBR2035CT-Y_14	TSC	获取价格	Dual Common Cathode Schottky Rectifier
MBR2035F	ASEMI	获取价格	Dual High-Voltage Schottky Rectifiers REV
MBR2035FCT	MCC	获取价格	20 Amp Schottky Barrier Rectifier 20 to 100 Volts
MBR2035FCT	KERSEMI	获取价格	High Surge Capacity
MBR2035-F-CT	HDSEMI	获取价格	TO-220 Plastic-Encapsulate Diodes
MBR2035FCT-B	MCC	获取价格	Rectifier Diode,
MBR2035FCTP	MCC	获取价格	Rectifier Diode, Schottky, 1 Phase, 2 Element, 20A, 35V V(RRM), Silicon, TO-220AB, PLASTIC
MBR2035H	ASEMI	获取价格	MBR2035Dual High-Voltage Schottky Rectifiers
MBR2035PT	LGE	获取价格	Schottky Barrier Rectifiers
MBR2035PT	TSC	获取价格	20.0 AMPS. Schottky Barrier Rectifiers