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MBR20200CT-BP PDF预览

MBR20200CT-BP

更新时间: 2024-01-08 10:28:34
品牌 Logo 应用领域
美微科 - MCC /
页数 文件大小 规格书
3页 107K
描述
Rectifier Diode, Schottky, 1 Phase, 2 Element, 20A, 200V V(RRM), Silicon, TO-220AB, PLASTIC PACKAGE-3

MBR20200CT-BP 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:TO-220AB
包装说明:PLASTIC, ITO-220AB, 3 PIN针数:3
Reach Compliance Code:unknown风险等级:5.32
Base Number Matches:1

MBR20200CT-BP 数据手册

 浏览型号MBR20200CT-BP的Datasheet PDF文件第2页浏览型号MBR20200CT-BP的Datasheet PDF文件第3页 
M C C  
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20736 Marilla Street Chatsworth  
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ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
TM  
MBR2020  
THRU  
Micro Commercial Components  
MBR20200  
Features  
Metal of silicon rectifier, majority carrier conduction  
Guard ring for transient protection  
Low power loss high efficiency  
20 Amp  
Schottky Barrier  
Rectifier  
20 to 200 Volts  
High surge capacity, High current capability  
Lead Free Finish/RoHS Compliant(Note 1) ("P" Suffix designates  
RoHS Compliant. See ordering information)  
Case Material: Molded Plastic. UL Flammability  
Classification Rating 94V-0 and MSL Rating 1  
Maximum Ratings  
Operating Temperature: -55°C to +150°C  
Storage Temperature: -55°C to +150°C  
TO-220AC  
B
L
M
MCC  
Catalog  
Number  
Device  
Marking  
Maximum  
Recurrent  
Maximum Maximum  
C
D
RMS  
Voltage  
DC  
Blocking  
Voltage  
Peak Reverse  
Voltage  
A
K
PIN  
MBR2020 MBR2020  
MBR2030 MBR2030  
MBR2040 MBR2040  
MBR2050 MBR2050  
MBR2060 MBR2060  
MBR2080 MBR2080  
MBR20100 MBR20100  
MBR20150 MBR20150  
MBR20200 MBR20200  
20V  
30V  
40V  
50V  
60V  
80V  
100V  
150V  
200V  
14V  
21V  
28V  
35V  
42V  
56V  
70V  
105V  
140V  
20V  
30V  
40V  
50V  
60V  
80V  
100V  
150V  
200V  
1
2
F
G
I
J
H
N
PIN 1  
PIN 2  
CASE  
Electrical Characteristics @ 25°C Unless Otherwise Specified  
Average Forward  
Current  
IF(AV)  
20A  
TC = 135°C  
Peak Forward Surge  
Current  
IFSM  
200A  
8.3ms, half sine  
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ꢀ ꢀ ꢀ ꢀ  
INCHES  
ꢃꢂꢄ  
MM  
ꢁꢂꢃ  
A
B
C
D
F
G
H
I
J
ꢃꢅꢆ  
ꢃꢂꢄ  
14.22  
9.65  
ꢃꢅꢆ  
15.88  
10.67  
3.43  
ꢄꢇꢈꢉ  
Maximum Forward  
Voltage Drop Per  
.560  
.380  
.100  
.230  
------  
.500  
.190  
.020  
.012  
.625  
.420  
.135  
VF  
IFM = 20A per  
element;  
TA = 25°C*  
2.54  
Element  
MBR2020-2040  
MBR2050-2060  
0.60V  
0.75V  
0.85V  
0.90V  
0.95V  
.270  
.250  
.580  
5.84  
------  
12.70  
6.86  
6.35  
14.73  
MBR2080-20100  
MBR20150  
MBR20200  
.210  
4.83  
5.33  
.045  
.025  
0.51  
0.30  
1.14  
0.64  
4.09  
4.83  
1.40  
2.92  
Maximum DC  
Reverse Current At  
Rated DC Blocking  
Voltage  
K
L
M
N
.139  
.161  
3.53  
.140  
.045  
.080  
.190  
.055  
.115  
3.56  
1.14  
2.03  
IR  
0.5mA TJ = 25°C  
*Pulse test: Pulse width 300 µsec, Duty cycle 1%  
Notes:1.High Temperature Solder Exemption Applied, see EU Directive Annex 7.  
www.mccsemi.com  
1 of 3  
Revision: 9  
2009/11/05  

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