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MBR20080CTD

更新时间： 2024-02-27 05:43:51
品牌 Logo 应用领域
美高森美 - MICROSEMI 局域网二极管
页数 文件大小 规格书
2页 117K
描述
Rectifier Diode, Schottky, 1 Phase, 2 Element, 100A, 80V V(RRM), Silicon, ROHS COMPLIANT PACKAGE-2

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MBR20080CTD 技术参数

生命周期：Active包装说明：ROHS COMPLIANT PACKAGE-2
针数：2Reach Compliance Code：compliant
ECCN代码：EAR99HTS代码：8541.10.00.80
风险等级：5.64应用：POWER
外壳连接：ANODE AND CATHODE配置：SERIES CONNECTED, CENTER TAP, 2 ELEMENTS
二极管元件材料：SILICON二极管类型：RECTIFIER DIODE
JESD-30 代码：R-XUFM-X2最大非重复峰值正向电流：2000 A
元件数量：2相数：1
端子数量：2最大输出电流：100 A
封装主体材料：UNSPECIFIED封装形状：RECTANGULAR
封装形式：FLANGE MOUNT认证状态：Not Qualified
最大重复峰值反向电压：80 V表面贴装：NO
技术：SCHOTTKY端子形式：UNSPECIFIED
端子位置：UPPERBase Number Matches：1

MBR20080CTD 数据手册

 浏览型号MBR20080CTD的Datasheet PDF文件第2页 
Schottky PowerMod  
CPT20080-CPT200100  
A
Dim. Inches  
Millimeters  
R
Min.  
Max. Notes  
Max. Min.  
G
Baseplate  
A=Common Anode  
---  
17.78  
---  
92.20  
20.32  
A ---  
B 0.700  
C ---  
E 0.120  
F 0.490  
3.630  
0.800  
0.630  
0.130  
0.510  
B
16.00  
3.30  
12.95  
3.05  
12.45  
Q
N
W
1.375 BSC  
G
34.92 BSC  
Baseplate  
---  
---  
7.37  
H 0.010  
N ---  
Q 0.275  
---  
---  
0.290  
0.25  
---  
F
Common Cathode  
1/4-20  
Dia.  
U
U
6.99  
R
80.01 BSC  
3.150 BSC  
C
15.24  
7.92  
4.57  
---  
8.64  
4.95  
U 0.600  
V 0.312  
W 0.180  
---  
0.340  
0.195  
H
Baseplate  
D=Doubler  
Dia.  
V
Notes:  
E
Baseplate: Nickel plated  
copper  
Microsemi  
Industry  
Working Peak Repetitive Peak  
Catalog Number Part Number Reverse VoltageReverse Voltage  
Schottky Barrier Rectifier  
Guard Ring Protection  
CPT20080*  
203CNQ080  
MBR12080CT  
MBR20080CT  
80V  
80V  
200 Amperes/ 80 to 100 Volts  
175 C Junction Temperature  
CPT20090*  
CPT200100*  
90V  
90V  
203CNQ100  
MBR120100CT  
MBR200100CT  
100V  
100V  
Reverse Energy Tested  
ROHS Compliant  
*Add Suffix A for Common Anode, D for Doubler  
Electrical Characteristics  
I
I
I
I
T
T
R
R
F(AV) 200 Amps  
F(AV) 100 Amps  
FSM 2000 Amps  
R(OV) 2 Amps  
FM 0.98 Volts  
FM .86 Volts  
C = 135°C, Square wave, 0JC =0.20°C/W  
Average forward current per pkg  
Average forward current per leg  
Maximum surge current per leg  
Maximum repetitive reverse current per leg  
Max peak forward voltage per leg  
Typical forward voltage per leg  
Max peak reverse current per leg  
Max peak reverse current per leg  
C = 135°C, Square wave, 0JC =0.40°C/W  
T
8.3ms, half sine, J = 175°C  
f = 1 KHZ, 25°C, 1µsec square wave  
V
I
T
T
FM = 200A: J = 25°C*  
V
I
I
I
FM = 200A: J = 175°C*  
V
T
RRM, J = 125°C*  
RM  
75 mA  
4.0 mA  
3000 pF  
T
V
V
RM  
RRM, J = 25°C  
C
T
R = 5.0V, C = 25°C  
Typical junction capacitance per leg  
J
*Pulse test: Pulse width 300µsec, Duty cycle 2%  
Thermal and Mechanical Characteristics  
T
T
R
R
R
Storage temp range  
STG  
J
OJC  
OJC  
OCS  
-55°C to 175°C  
-55°C to 175°C  
0.40°C/W Junction to case  
0.20°C/W Junction to case  
0.08°C/W Case to sink  
Operating junction temp range  
Max thermal resistance per leg  
Max thermal resistance per pkg  
Typical thermal resistance (greased)  
Terminal Torque  
Mounting Base Torque (outside holes)  
Mounting Base Torque (center hole)  
center hole must be torqued first  
35-50 inch pounds  
30-40 inch pounds  
8-10 inch pounds  
Weight  
2.8 ounces (75 grams) typical  
www.microsemi.com  
January, 2010 - Rev. 4  
12

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