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MBR1035 PDF预览

MBR1035

更新时间: 2024-01-20 17:21:46
品牌 Logo 应用领域
TSC 二极管局域网
页数 文件大小 规格书
2页 57K
描述
10.0 AMPS. Schottky Barrier Rectifiers

MBR1035 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:R-PSFM-T2Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.1Is Samacsys:N
其他特性:FREE WHEELING DIODE, LOW POWER LOSS应用:EFFICIENCY
外壳连接:CATHODE配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.84 VJEDEC-95代码:TO-220AC
JESD-30 代码:R-PSFM-T2湿度敏感等级:1
最大非重复峰值正向电流:150 A元件数量:1
相数:1端子数量:2
最高工作温度:150 °C最低工作温度:-65 °C
最大输出电流:10 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
认证状态:Not Qualified最大重复峰值反向电压:35 V
子类别:Rectifier Diodes表面贴装:NO
技术:SCHOTTKY端子面层:Pure Tin (Sn)
端子形式:THROUGH-HOLE端子位置:SINGLE
Base Number Matches:1

MBR1035 数据手册

 浏览型号MBR1035的Datasheet PDF文件第2页 
MBR1035 THRU MBR10200  
10.0 AMPS. Schottky Barrier Rectifiers  
Voltage Range  
35 to 200 Volts  
Current  
10.0 Amperes  
TO-220A  
Features  
.185(4.70)  
.175(4.44)  
Plastic material used carries Underwriters Laboratory  
Classifications 94V-0  
Metal silicon junction, majority carrier conduction  
Low power loss, high efficiency  
High current capability, low forward voltage drop  
High surge capability  
For use in low voltage, high frequency inverters, free  
wheeling, and polarity protection applications  
Guardring for overvoltage protection  
High temperature soldering guaranteed:  
260oC/10 seconds,0.25”(6.35mm)from case  
.055(1.40)  
.045(1.14)  
.412(10.5)  
MAX  
DIA  
.154(3.91)  
.148(3.74)  
.113(2.87)  
.103(2.62)  
.27(6.86)  
.23(5.84)  
.594(15.1)  
.587(14.9)  
PIN1  
2
.16(4.06)  
.14(3.56)  
.11(2.79)  
.10(2.54)  
.56(14.22)  
.53(13.46)  
.037(0.94)  
.027(0.68)  
Mechanical Data  
Cases: JEDEC TO-220A molded plastic body  
Terminals: Lead solderable per MIL-STD-750, Method  
2026  
.025(0.64)  
.014(0.35)  
.205(5.20)  
.195(4.95)  
Polarity: As marked  
Mounting position: Any  
Mounting torque: 5 in. - lbs. max  
Weight: 0.08 ounce, 2.24 grams  
Dimensions in inches and (millimeters)  
Maximum Ratings and Electrical Characteristics  
Rating at 25ambient temperature unless otherwise specified.  
Single phase, half wave, 60 Hz, resistive or inductive load.  
For capacitive load, derate current by 20%  
MBR MBR MBR MBR MBR MBR MBR  
1035 1045 1050 1060 1090 10100 10200  
Symbol  
Type Number  
Units  
Maximum Recurrent Peak Reverse Voltage  
Maximum RMS Voltage  
V
V
V
35  
24  
35  
45  
31  
45  
50  
35  
50  
60  
42  
60  
90  
63  
90  
100  
200  
140  
200  
VRRM  
VRMS  
VDC  
70  
Maximum DC Blocking Voltage  
100  
Maximum Average Forward Rectified Current  
See Fig. 1  
A
A
A
10  
I(AV)  
IFRM  
IFSM  
Peak Repetitive Forward Current (Square Wave,  
20KHz) at Tc=135oC  
20.0  
150  
Peak Forward Surge Current, 8.3 ms Single Half  
Sine-wave Superimposed on Rated Load (JEDEC  
method )  
Peak Repetitive Reverse Surge Current (Note 1)  
A
1.0  
0.5  
IRRM  
dV/dt  
Voltage Rate of Change (Rated VR)  
V/uS  
10,000  
Maximum Instantaneous Forward Voltage at  
(Note 2)  
IF=10A, Tc=25OC  
IF=10A, Tc=125OC  
IF=20A, Tc=25OC  
IF=20A, Tc=125OC  
0.70  
0.57  
0.84  
0.72  
0.80  
0.70  
0.95  
0.85  
0.85  
0.71  
1.05  
-
-
VF  
V
-
-
Maximum Instantaneous Reverse Current  
@ Tc =25at Rated DC Blocking Voltage (Note 2)  
@ Tc=125℃  
0.1  
15.0  
0.1  
6.0  
0.009  
10  
mA  
mA  
IR  
Typical Junction Capacitance (Note 3)  
350  
280  
200  
2.0  
pF  
/W  
Cj  
RθJC  
TJ  
Maximum Thermal Resistance, Junction to Case  
Operating Junction Temperature Range  
Storage Temperature Range  
3.5  
-65 to +150  
-65 to +175  
TSTG  
Notes: 1. 2.0us Pulse Width, f=1.0 KHz  
2. Pulse Test: 300us Pulse Width, 1% Duty Cycle  
3. Mounted on Heatsink Size of 2 in x 3 in x 0.25in Al-Plate.  
- 88 -  

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