Datasheet > MBR1035

MBR1035

更新时间： 2024-02-01 11:03:01

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		二极管局域网
页数	文件大小	规格书
3页	48K
描述
10 Ampere Schottky Barrier Rectifiers

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中文翻译

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数据手册
替代型号

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MBR1035 数据手册

MBR1035 - MBR1060

.412(10.5)

.185(4.70)

.175(4.44)

DIA

Features

MAX

.154(3.91)

.148(3.74)

.055(1.40)

.045(1.14)

• Low power loss, high efficiency.

• High surge capacity.

• For use in low voltage, high frequency

inverters, free wheeling, and polarity

protection applications.

.113(2.87)

.103(2.62)

.27(6.86)

.23(5.84)

.594(15.1)

.587(14.91)

Dimensions

are in:

inches (mm)

.16(4.06)

.14(3.56)

• Metal silicon junction, majority carrier

conduction.

.11(2.79)

.10(2.54)

.56(14.22)

.53(13.46)

• High current capacity, low forward

voltage drop.

.037(0.94)

.027(0.68)

• Guard ring for over voltage protection.

TO-220AC

PIN 1 +

.205(5.20)

.195(4.95)

.025(0.64)

.014(0.35)

CASE

PIN 2 -

CASE Positive

10 Ampere Schottky Barrier Rectifiers

Absolute Maximum Ratings*

T_A= 25°C unless otherwise noted

Symbol

Parameter

Value

Units

I_O

i_{f(repetitive)}

Average Rectified Current

Peak Repetitive Forward Current

(Rated V_R, Square Wave, 20 KHz) @ T_A= 135°C

Peak Forward Surge Current

i_f(surge)

8.3 ms single half-sine-wave

150

Superimposed on rated load (JEDEC method)

P_D

Total Device Dissipation

Derate above 25°C

Thermal Resistance, Junction to Ambient

2.0

16.6

mW/°C

°C/W

R_θJA

R_θJL

T_stg

T_J

Thermal Resistance, Junction to Lead

Storage Temperature Range

2.0

°C/W

°C

-65 to +175

-65 to +150

Operating Junction Temperature

°C

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

Electrical Characteristics

T_A= 25°C unless otherwise noted

Parameter

Device

Units

1035

1045

1050

1060

Peak Repetitive Reverse Voltage

Maximum RMS Voltage

DC Reverse Voltage

(Rated V_R)

10,000

V/uS

Voltage Rate of Change (Rated V_R)

Maximum Reverse Current

0.1

@ rated V_R

T_A= 25°C

T_A= 125°C

Maximum Forward Voltage

_{F =}10 A, T_C= 25°C

0.80

0.70

0.95

0.85

0.57

0.84

0.72

I_{F =}10 A, T_C= 125°C

I_{F =}20 A, T_C= 25°C

I_{F =}20 A, T_C= 125°C

Peak Repetitive Reverse Surge

Current

1.0

0.5

2.0 us Pulse Width, f = 1.0 KHz

MBR1035 - MBR1060, Rev. A

1999 Fairchild Semiconductor Corporation

12 3

中文翻译

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MBR1035 替代型号

型号	品牌	替代类型	描述	数据表
VS-MBR1035PBF	VISHAY	功能相似	DIODE SCHOTTKY 35V 10A TO220AC
MBR1035G	ONSEMI	功能相似	SWITCHMODE Power Rectifiers
MBR1035	VISHAY	功能相似	SCHOTTKY RECTIFIER

与MBR1035相关器件

型号	品牌	获取价格	描述	数据表
MBR1035_01	FAIRCHILD	获取价格	Schottky Rectifiers
MBR1035_1	TSC	获取价格	10.0 AMPS. Schottky Barrier Rectifiers
MBR1035_11	TSC	获取价格	10.0 AMPS. Schottky Barrier Rectifiers
MBR1035_12	TSC	获取价格	10.0 AMPS. Schottky Barrier Rectifiers High surge capability
MBR1035_12	FAIRCHILD	获取价格	Schottky Rectifiers
MBR1035_14	TSC	获取价格	Schottky Barrier Rectifier
MBR1035CA	THINKISEMI	获取价格	10.0 Ampere Dual Common Anode Schottky Barrier Rectifier Diodes
MBR1035CT	SIRECTIFIER	获取价格	肖特基势垒二极管Schottky Barrier Diodes，高结温低漏电流肖特基势垒二
MBR1035CT	LGE	获取价格	Schottky Barrier Rectifiers
MBR1035CT	DIODES	获取价格	10A SCHOTTKY BARRIER RECTIFIER

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