Datasheet > MBR1035

MBR1035

更新时间： 2024-01-04 04:10:48

品牌	Logo	应用领域
星合电子 - GXELECTRONICS		二极管局域网
页数	文件大小	规格书
2页	332K
描述
Voltage Range 35 to 200 Volts Current 10.0 Amperes

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中文翻译

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数据手册

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MBR1035 数据手册

MBR1035 THRU MBR10200

星合子

XINGHE ELECTRONICS

Voltage Range

35 to 200 Volts

10.0 Amperes

Current

TO-220A

Features

.185(4.70)

.175(4.44)

ꢀ

Plastic material used carries Underwriters Laboratory

Classifications 94V-0

Metal silicon junction, majority carrier conduction

Low power loss, high efficiency

High current capability, low forward voltage drop

High surge capability

For use in low voltage, high frequency inverters, free

wheeling, and polarity protection applications

Guardring for overvoltage protection

.055(1.40)

.045(1.14)

.412(10.5)

MAX

DIA

.154(3.91)

.148(3.74)

ꢀ

.113(2.87)

.103(2.62)

.27(6.86)

.23(5.84)

.594(15.1)

.587(14.9)

PIN1

ꢀ

.16(4.06)

.14(3.56)

High temperature soldering guaranteed:

.11(2.79)

.10(2.54)

260^oC/10 seconds,0.25”(6.35mm)from case

.56(14.22)

.53(13.46)

.037(0.94)

.027(0.68)

Mechanical Data

ꢀ

Cases: JEDEC TO-220A molded plastic body

Terminals: Lead solderable per MIL-STD-750, Method

2026

.025(0.64)

.014(0.35)

ꢀ

.205(5.20)

.195(4.95)

ꢀ

Polarity: As marked

Mounting position: Any

Mounting torque: 5 in. - lbs. max

ꢀ

Weight: 0.08 ounce, 2.24 grams

Dimensions in inches and (millimeters)

Maximum Ratings and Electrical Characteristics

Rating at 25℃ambient temperature unless otherwise specified.

Single phase, half wave, 60 Hz, resistive or inductive load.

For capacitive load, derate current by 20%

MBR MBR MBR MBR MBR MBR MBR

1035 1045 1050 1060 1090 10150 10200

Symbol

Type Number

Units

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Voltage

150

105

150

200

V_RRM

V_RMS

V_DC

140

Maximum DC Blocking Voltage

200

Maximum Average Forward Rectified Current

See Fig. 1

I_(AV)

I_FRM

I_FSM

Peak Repetitive Forward Current (Square Wave,

20KHz) at Tc=135^oC

20.0

150

Peak Forward Surge Current, 8.3 ms Single Half

Sine-wave Superimposed on Rated Load (JEDEC

method )

Peak Repetitive Reverse Surge Current (Note 1)

1.0

0.5

I_RRM

dV/dt

Voltage Rate of Change (Rated V_R)

V/uS

10,000

Maximum Instantaneous Forward Voltage at

(Note 2)

I_F=10A, Tc=25^OC

I_F=10A, Tc=125^OC

I_F=20A, Tc=25^OC

I_F=20A, Tc=125^OC

0.70

0.57

0.84

0.72

0.80

0.70

0.95

0.85

0.71

1.05

V_F

Maximum Instantaneous Reverse Current

@ Tc =25℃at Rated DC Blocking Voltage (Note 2)

@ Tc=125℃

0.1

15.0

0.1

6.0

0.009

I_R

Typical Junction Capacitance (Note 3)

350

280

200

2.0

℃/W

℃

Rθ_JC

T_J

Maximum Thermal Resistance, Junction to Case

Operating Junction Temperature Range

Storage Temperature Range

3.5

-65 to +150

-65 to +175

℃

TSTG

Notes: 1. 2.0us Pulse Width, f=1.0 KHz

2. Pulse Test: 300us Pulse Width, 1% Duty Cycle

3. Mounted on Heatsink Size of 2 in x 3 in x 0.25in Al-Plate.

GAOMI XINGHE ELECTRONICSCO.,LTD.

WWW.SDDZG.COM

TEL:0536-2210359

QQ:464768017

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与MBR1035相关器件

型号	品牌	获取价格	描述	数据表
MBR1035_01	FAIRCHILD	获取价格	Schottky Rectifiers
MBR1035_1	TSC	获取价格	10.0 AMPS. Schottky Barrier Rectifiers
MBR1035_11	TSC	获取价格	10.0 AMPS. Schottky Barrier Rectifiers
MBR1035_12	TSC	获取价格	10.0 AMPS. Schottky Barrier Rectifiers High surge capability
MBR1035_12	FAIRCHILD	获取价格	Schottky Rectifiers
MBR1035_14	TSC	获取价格	Schottky Barrier Rectifier
MBR1035CA	THINKISEMI	获取价格	10.0 Ampere Dual Common Anode Schottky Barrier Rectifier Diodes
MBR1035CT	SIRECTIFIER	获取价格	肖特基势垒二极管Schottky Barrier Diodes，高结温低漏电流肖特基势垒二
MBR1035CT	LGE	获取价格	Schottky Barrier Rectifiers
MBR1035CT	DIODES	获取价格	10A SCHOTTKY BARRIER RECTIFIER

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