Datasheet > MBR1030CT

MBR1030CT

更新时间： 2024-10-01 04:41:11

品牌	Logo	应用领域
强茂 - PANJIT		肖特基二极管
页数	文件大小	规格书
2页	431K
描述
10 AMPERES SCHOTTKY BARRIER RECTIFIERS

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MBR1030CT 数据手册

MBR1020CT~MBR10100CT

10 AMPERES SCHOTTKY BARRIER RECTIFIERS

Unit : inch (mm)

TO-220AB

VOLTAGE

10 Amperes

20 to 100 Volts

CURRENT

.419(10.66)

.196(5.00)

.163(4.16)

.387(9.85)

FEATURES

.139(3.55)

MIN

.054(1.39)

.045(1.15)

• Plastic package has Underwriters Laboratory

Flammability Classification 94V-O.

Flame Retardant Epoxy Molding Compound.

• Metal silicon junction, majority carrier conduction

• Low power loss, high efficiency.

• High current capability

• Guardring for overvlotage protection

• For use in low voltage,high frequency inverters

free wheeling , and polarlity protection applications.

• Pb free product are available : 99% Sn above can meet Rohs

environment substance directive request

.038(0.96)

.019(0.50)

.025(0.65)MAX

.1(2.54)

MECHANICALDATA

Case: TO-220AB molded plastic

Positive CT

Terminals: solder plated, solderable per MIL-STD-750, Method 2026

Polarity: As marked.

Mounting Position: Any

Weight: 0.08 ounces, 2.24grams.

MAXIMUMRATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.

For capacitive load, derate current by 20%

PARAMETER

SYMBOL MBR1020CT MBR1030CT MBR1040CT MBR1045CT MBR1050CT MBR1060CT MBR1080CT MBR10100CT UNITS

Maximum Recurrent Peak Reverse Voltage

RRM

RMS

31.5

100

Maximum RMS Voltage

Maximum DC Blocking Voltage

Maximum Average Forward Current (See fig.1)

100

Peak Forward Surge Current :8.3ms single half sine-

wave superimposed on rated load(JEDEC method)

FSM

150

Maximum Forward Voltage at 5A, per leg

0.65

0.75

0.8

Maximum DC Reverse Current

at Rated DC Blocking Voltage

=25 ^OC

0.1

=125^O

Typical Thermal Resistance

RθJC

^OC

Operating Junction Temperature Range

Storage Temperature Range

-50 TO

150

^OC

STG

-50 TO

175

Notes :

Both Bonding and Chip structure are available.

PAGE . 1

REV.0-MAR.30.2005

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