SPICE MODELS: MBR1030CT MBR1040CT MBR1045CT MBR1050CT MBR1060CT
MBR1030CT - MBR1060CT
10A SCHOTTKY BARRIER RECTIFIER
Features
·
·
Schottky Barrier Chip
Guard Ring Die Construction for
Transient Protection
TO-220AB
Min
·
·
·
·
Low Power Loss, High Efficiency
High Surge Capability
Dim
A
B
C
D
E
Max
15.75
10.40
3.43
6.40
3.93
14.27
2.70
0.93
3.78
4.82
1.39
0.50
2.79
L
14.48
10.00
2.54
B
M
High Current Capability and Low Forward Voltage Drop
For Use in Low Voltage, High Frequency Inverters, Free
Wheeling, and Polarity Protection Applications
C
D
E
K
·
Lead Free Finish, RoHS Compliant (Note 3)
5.90
A
2.80
Mechanical Data
1
2
3
G
H
J
12.70
2.40
·
·
Case: TO-220AB
G
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
0.69
J
N
K
L
3.54
·
·
·
Moisture Sensitivity: Level 1 per J-STD-020C
Polarity: As Marked on Body
4.07
H
H
P
M
N
P
1.15
Terminals: Finish – Bright Tin. Solderable per
MIL-STD-202, Method 208
0.30
Pin 1
Pin 2
Pin 3
Case
2.04
·
·
Marking: Type Number
All Dimensions in mm
Weight: 2.24 grams (approx.)
@ TA = 25°C unless otherwise specified
Maximum Ratings and Electrical Characteristics
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
MBR
MBR
MBR
MBR
MBR
MBR
Characteristic
Symbol
Unit
1030CT 1035CT 1040CT 1045CT 1050CT 1060CT
VRRM
VRWM
VR
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
30
21
35
40
28
45
50
35
60
42
V
VR(RMS)
IO
RMS Reverse Voltage
24.5
31.5
V
A
Average Rectified Output Current
(Note 1)
10
@ TC = 105°C
Non-Repetitive Peak Forward Surge Current
IFSM
IRRM
VFM
8.3ms Single half sine-wave superimposed on rated load
(JEDEC Method)
125
1.0
A
A
V
Repetitive Peak Reverse Surge Current
@ t £ 2.0ms
Forward Voltage Drop
@ IF = 5.0A, TC = 125°C
@ IF = 5.0A, TC
@ IF = 10A, TC
0.57
0.70
0.84
0.70
0.80
0.95
=
=
25°C
25°C
Peak Reverse Current
at Rated DC Blocking Voltage
@ TC
=
25°C
0.1
15
IRM
mA
@ TC = 125°C
Cj
Typical Junction Capacitance (Note 2)
150
30
pF
K/W
V/ms
°C
RqJC
Typical Thermal Resistance Junction to Case (Note 1)
Voltage Rate of Change (Rated VR)
dV/dt
Tj, TSTG
1000
Operating and Storage Temperature Range
-65 to +150
Notes:
1. Thermal resistance junction to case mounted on heatsink.
2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
3. RoHS revision 13.2.2003. Glass and High Temperature Solder Exemptions Applied, see EU Directive Annex Notes 5 and 7.
DS30027 Rev. 2 - 2
1 of 2
MBR1030CT-MBR1060CT
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ã Diodes Incorporated