Datasheet > MBR10200CT

MBR10200CT

更新时间： 2024-09-25 04:41:07

品牌	Logo	应用领域
SIRECTIFIER		IOT
页数	文件大小	规格书
2页	180K
描述
Wide Temperature Range and High Tjm Schottky Barrier Rectifiers

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数据手册

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MBR10200CT 数据手册

MBR10150CT thru MBR10200CT

Wide Temperature Range and High Tjm Schottky Barrier Rectifiers

Dimensions TO-220AB

Dim.

Inches

Min. Max.

Milimeter

Min. Max.

0.500 0.550

0.580 0.630

0.390 0.420

0.139 0.161

0.230 0.270

0.100 0.125

0.045 0.065

0.110 0.230

0.025 0.040

12.70 13.97

14.73 16.00

9.91 10.66

C(TAB)

3.54

5.85

2.54

1.15

2.79

0.64

2.54

4.32

1.14

0.35

2.29

4.08

6.85

3.18

1.65

5.84

1.01

BSC

4.82

1.39

0.56

2.79

A=Anode, C=Cathode, TAB=Cathode

VRRM

VRMS

VDC

0.100

BSC

MBR10150CT 150

MBR10200CT 200

105

140

150

200

0.170 0.190

0.045 0.055

0.014 0.022

0.090 0.110

Symbol

Characteristics

Maximum Ratings

Unit

I(AV)

Maximum Average Forward Rectified Current @TC=120^oC

Peak Forward Surge Current 8.3ms Single Half-Sine-Wave

Superimposed On Rated Load (JEDEC METHOD)

IFSM

120

dv/dt

Voltage Rate Of Change (Rated VR)

10000

V/us

IF=5A @TJ=25 C

0.95

0.80

Maximum Forward

Voltage (Note 1)

IF=5A @TJ=125 C

IF=10A @TJ=25^oC

IF=10A @TJ=125^oC

Maximum DC Reverse Current

At Rated DC Blocking Voltage

@TJ=25^oC

0.05

@TJ=125^oC

4.5

^oC/W

ROJC

Typical Thermal Resistance (Note 2)

Operating Temperature Range

Storage Temperature Range

-55 to +150

^oC

TSTG

NOTES: 1. 300us Pulse Width, Duty Cycle 2%.

2. Thermal Resistance Junction To Case.

3. Measured At 1.0MHz And Applied Reverse Voltage Of 4.0V DC.

FEATURES

MECHANICAL DATA

* Metal of silicon rectifier, majority carrier conducton

* Guard ring for transient protection

* Low power loss, high efficiency

* High current capability, low VF

* Case: TO-220AB molded plastic

* Polarity: As marked on the body

* Weight: 0.08 ounces, 2.24 grams

* Mounting position: Any

* High surge capacity

* For use in low voltage, high frequency inverters, free

whelling, and polarity protection applications

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