Datasheet > MBR10100

MBR10100

更新时间： 2024-09-25 12:03:35

品牌	Logo	应用领域
星合电子 - GXELECTRONICS		二极管局域网
页数	文件大小	规格书
2页	377K
描述
Metal of silicon rectifier , majority carrier conduction

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MBR10100 数据手册

MBR1030 thru MBR10100

星合子

XINGHE ELECTRONICS

REVERSE VOLTAGE - 30 to 100Volts

FORWARD CURRENT - 10.0 Amperes

TO-220AC

FEATURES

.187(4.7)

●Metal of silicon rectifier , majority carrier conduction

.108

(2.75)

.148(3.8)

.055(1.4)

.047(1.2)

.153(3.9)

.146(3.7)

.413(10.5)

.374(9.5)

●Guard ring for transient protection

●Low power loss,high efficiency

●High current capability,low VF

.270(6.9)

.230(5.8)

●High surge capacity

●Plastic package has UL flammability

.610(15.5)

.583(14.8)

classification 94V-0

●For use in low voltage,high frequency inverters,free

wheeling,and polarity protection applications

.04 MAX

(1.0)

.157

(4.0)

.583(14.8)

.531(13.5)

.051

(1.3)

MECHANICAL DATA

●Case: TO-220AC molded plastic

●Polarity: As marked on the body

●Weight: 0.08ounces,2.24 grams

●Mounting position :Any

.043(1.1)

.032(0.8)

.024(0.6)

.012(0.3)

.102(2.6)

.091(2.3)

.126

(3.2)

Dimensions in inches and (millimeters)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Rating at 25℃ ambient temperature unless otherwise specified.

Single phase, half wave ,60Hz, resistive or inductive load.

For capacitive load, derate current by 20%

SYMBOL MBR1030 MBR1040 MBR1050 MBR1060 MBR1080 MBR10100 UNIT

CHARACTERISTICS

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Voltage

VRRM

VRMS

VDC

100

Maximum DC Blocking Voltage

100

Maximum Average Forward

I(AV)

10.0

150

Rectified Current ( See Fig.1)

Peak Forward Surge Current

IFSM

8.3ms Single Half Sine-Wave

Super Imposed on Rated Load (JEDEC Method)

0.70

0.57

0.84

0.72

0.1

0.80

0.70

0.95

0.85

0.1

0.85

0.71

Peak Forward Voltage (Note1)

IF=10A @TJ=25℃

IF=10A @TJ=125℃

IF=20A @TJ=25℃

IF=20A @TJ=125℃

@TJ=25℃

0.1

6.0

Maximum DC Reverse Current

at Rated DC Bolcking Voltage

@TJ=125℃

400

2.5

1100

2.0

Typical Junction Capacitance (Note2)

Typical Thermal Resistance (Note3)

Operating Temperature Range

Storage Temperature Range

RθJC

℃/W

℃

-55 to +150

-55 to +175

TSTG

℃

NOTES:1.300us pulse width,2% duty cycle.

2.Measured at 1.0 MHZ and applied reverse voltage of 4.0V DC.

3.Thermal resistance junction to case.

GAOMI XINGHE ELECTRONICSCO.,LTD.

WWW.SDDZG.COM

TEL:0536-2210359

QQ:464768017

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与MBR10100相关器件

型号	品牌	获取价格	描述	数据表
MBR10100_15	GOOD-ARK	获取价格	Product Specification
MBR10100AULPS	PACELEADER	获取价格	10.0A SCHOTTKY BARRIER RECTIFIERS 100V
MBR10100BCT	LGE	获取价格	10A Surface Mount High Power Schottky Barrier Rectifiers
MBR10100-BP	MCC	获取价格	Rectifier Diode, Schottky, 1 Phase, 1 Element, 10A, 100V V(RRM), Silicon, TO-220AC, ROHS C
MBR10100C	SIRECT	获取价格	Power Schottky Rectifier - 10Amp 100Volt
MBR10100C	DIODES	获取价格	HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
MBR10100C	BCDSEMI	获取价格	HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
MBR10100C	UTC	获取价格	SCHOTTKY BARRIER RECTIFIER
MBR10100C	RECTRON	获取价格	Reverse Voltage Vr : 100 V;Forward Current Io : 10.0 A;Max Surge Current : 100 A;Forward V
MBR10100C_11	BCDSEMI	获取价格	HIGH VOLTAGE POWER SCHOTTKY RECTIFIER

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