Datasheet > 晶体管 > IGBT> MBN400GS12BW

MBN400GS12BW

更新时间： 2024-01-26 18:17:39

品牌	Logo	应用领域
日立 - HITACHI		双极性晶体管
页数	文件大小	规格书
4页	122K
描述
Insulated Gate Bipolar Transistor, 400A I(C), 1200V V(BR)CES

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技术参数
数据手册

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MBN400GS12BW 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	5.65
最大集电极电流 (IC)：	400 A	集电极-发射极最大电压：	1200 V
门极-发射极最大电压：	20 V	元件数量：	1
最高工作温度：	150 °C	最大功率耗散 (Abs)：	2000 W
子类别：	Insulated Gate BIP Transistors	VCEsat-Max：	3.4 V
Base Number Matches：	1

MBN400GS12BW 数据手册

IGBT MODULE

MBN400GS12AW

Silicon N-channel IGBT

OUTLINE DRAWING

Unit in mm

FEATURES

* High speed and low saturation voltage.

* low noise due to built-in free-wheeling

diode - ultra soft fast recovery diode(USFD).

* Isolated head sink (terminal to base).

TERMINALS

Weight: 480 (g)

ABSOLUTE MAXIMUM RATINGS (Tc=25 C )

Item

Symbol

V_CES

Unit

MBN400GS12AW

1,200

Collector Emitter Voltage

Gate Emitter Voltage

Collector Current

V_GES

I_C

I_Cp

I_F

I_FM

T_j

T_stg

V_ISO

1ms

400

800

400

800

Forward Current

(1)

1ms

Collector Power Dissipation

J unction Temperature

Storage Temperature

Isolation Voltage

2,000

-40 ~ +150

-40 ~ +125

2,500(AC 1 minute)

1.37(14)/2.94(30)

2.94(30)

V_RMS

Screw Torque

Terminals

Mounting

(2)

(3)

N.m

(kgf.cm)

Notes:(1)RMS Current of Diode 120Arms max.

(2)Recommended Value 1.18/2.45N.m(12/25kgf.cm)

(3)Recommended Value 2.45N.m(25kgf.cm)

CHARACTERISTICS (Tc=25 C )

Item

Symbol Unit Min. Typ. Max.

Test Conditions

1.0 V_CE=1,200V,V_GE=0V

500 V_GE= 20V,V_CE=0V

Collector Emitter Cut-Off Current

I _CES

Gate Emitter Leakage Current

I_GES

Collector Emitter Saturation Voltage

Gate Emitter Threshold Voltage

Input Capacitance

V_CE(sat)

V_GE(TO)

C_ies

t_r

t_on

t_f

2.7

37,000

0.25

0.4

3.4 I_C=400A,V_GE=15V

10 V_CE=5V, I_C=400mA

V_CE=10V,V_GE=0V,f=1MHz

Rise Time

0.5 V_CC=600V

Turn On Time

0.7 R =1.5

Switching Times

Fall Time

0.25

0.35 R =2.7

(4)

Turn Off Time

Peak Forward Voltage Drop

t_off

V_FM

0.75

2.5

1.1 V_GE= 15V

3.5 I_F=400A,V_GE=0V

Reverse Recovery Time

Thermal Impedance IGBT

FWD

t_rr

Rth(j-c)

0.4 I_F=400A,V_GE=-10V, di/dt=400A/ s

C/W

0.06

0.14

J unction to case

Notes:(4) R_Gvalue is the test condition’s value for decision of the switching times, not recommended value.

Determine the suitable R_Gvalue after the measurement of switching waveforms

(overshoot voltage,etc.)with appliance mounted.

PDE-N400GS12AW-0

12 3 4

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