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MBM29DL163BE12PBT PDF预览

MBM29DL163BE12PBT

更新时间: 2024-11-24 21:00:15
品牌 Logo 应用领域
飞索 - SPANSION /
页数 文件大小 规格书
75页 1089K
描述
Flash, 1MX16, 120ns, PBGA48,

MBM29DL163BE12PBT 技术参数

生命周期:Transferred包装说明:FBGA, BGA48,6X8,32
Reach Compliance Code:unknown风险等级:5.8
最长访问时间:120 ns备用内存宽度:8
启动块:BOTTOM命令用户界面:YES
通用闪存接口:YES数据轮询:YES
JESD-30 代码:R-PBGA-B48内存密度:16777216 bit
内存集成电路类型:FLASH内存宽度:16
部门数/规模:8,31端子数量:48
字数:1048576 words字数代码:1000000
最高工作温度:85 °C最低工作温度:-40 °C
组织:1MX16封装主体材料:PLASTIC/EPOXY
封装代码:FBGA封装等效代码:BGA48,6X8,32
封装形状:RECTANGULAR封装形式:GRID ARRAY, FINE PITCH
并行/串行:PARALLEL电源:3/3.3 V
认证状态:Not Qualified就绪/忙碌:YES
部门规模:8K,64K最大待机电流:0.000005 A
子类别:Flash Memories最大压摆率:0.05 mA
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子形式:BALL
端子节距:0.8 mm端子位置:BOTTOM
切换位:YES类型:NOR TYPE
Base Number Matches:1

MBM29DL163BE12PBT 数据手册

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FUJITSU SEMICONDUCTOR  
DATA SHEET  
DS05-20880-1E  
FLASH MEMORY  
CMOS  
16M (2M × 8/1M × 16) BIT Dual Operation  
MBM29DL16XTE/BE-70/90/12  
FEATURES  
• 0.23 µm Process Technology  
• Simultaneous Read/Write operations (dual bank)  
Multiple devices available with different bank sizes (Refer to Table 1)  
Host system can program or erase in one bank, then immediately and simultaneously read from the other bank  
Zero latency between read and write operations  
Read-while-erase  
Read-while-program  
• Single 3.0 V read, program, and erase  
Minimizes system level power requirements  
(Continued)  
PRODUCT LINE UP  
Part No.  
VCC = 3.3 V  
MBM29DL16XTE/BE  
+0.3 V  
–0.3 V  
70  
Ordering Part No.  
+0.6 V  
–0.3 V  
VCC = 3.0 V  
70  
70  
30  
90  
90  
90  
35  
12  
120  
120  
50  
Max. Address Access Time (ns)  
Max. CE Access Time (ns)  
Max. OE Access Time (ns)  
PACKAGES  
48-pin plastic TSOP (I)  
48-pin plastic TSOP (I)  
48-pin plastic FBGA  
Marking Side  
Marking Side  
(FPT-48P-M20)  
(FPT-48P-M19)  
(BGA-48P-M11)  

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