是否Rohs认证: | 不符合 | 生命周期: | Contact Manufacturer |
零件包装代码: | BGA | 包装说明: | TFBGA, BGA71,8X12,32 |
针数: | 71 | Reach Compliance Code: | compliant |
HTS代码: | 8542.32.00.71 | 风险等级: | 5.2 |
最长访问时间: | 90 ns | 其他特性: | SRAM IS CONFIGURED AS 256K X 16/512K X 8 |
JESD-30 代码: | R-PBGA-B71 | JESD-609代码: | e0 |
长度: | 11 mm | 内存密度: | 33554432 bit |
内存集成电路类型: | MEMORY CIRCUIT | 内存宽度: | 16 |
混合内存类型: | FLASH+SRAM | 功能数量: | 1 |
端子数量: | 71 | 字数: | 2097152 words |
字数代码: | 2000000 | 工作模式: | ASYNCHRONOUS |
最高工作温度: | 85 °C | 最低工作温度: | -25 °C |
组织: | 2MX16 | 封装主体材料: | PLASTIC/EPOXY |
封装代码: | TFBGA | 封装等效代码: | BGA71,8X12,32 |
封装形状: | RECTANGULAR | 封装形式: | GRID ARRAY, THIN PROFILE, FINE PITCH |
峰值回流温度(摄氏度): | NOT SPECIFIED | 电源: | 3 V |
认证状态: | Not Qualified | 座面最大高度: | 1.2 mm |
子类别: | Other Memory ICs | 最大压摆率: | 0.053 mA |
最大供电电压 (Vsup): | 3.3 V | 最小供电电压 (Vsup): | 2.7 V |
标称供电电压 (Vsup): | 3 V | 表面贴装: | YES |
技术: | CMOS | 温度等级: | OTHER |
端子面层: | Tin/Lead (Sn/Pb) | 端子形式: | BALL |
端子节距: | 0.8 mm | 端子位置: | BOTTOM |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 宽度: | 7 mm |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
MB84VD22193EB-85-PBS | FUJITSU |
获取价格 |
SPECIALTY MEMORY CIRCUIT, PBGA73, PLASTIC, FBGA-73 | |
MB84VD22193EB-90-PBS | FUJITSU |
获取价格 |
Memory Circuit, 2MX16, CMOS, PBGA73, PLASTIC, FBGA-73 | |
MB84VD22193EC | FUJITSU |
获取价格 |
32M (x 8/x16) FLASH MEMORY & 4M (x 8/x16) STATIC RAM | |
MB84VD22193EC-90 | FUJITSU |
获取价格 |
32M (x 8/x16) FLASH MEMORY & 4M (x 8/x16) STATIC RAM | |
MB84VD22193EC-90-PBS | FUJITSU |
获取价格 |
32M (x 8/x16) FLASH MEMORY & 4M (x 8/x16) STATIC RAM | |
MB84VD22193EE | FUJITSU |
获取价格 |
32M (x 8/x16) FLASH MEMORY & 4M (x 8/x16) STATIC RAM | |
MB84VD22193EE-85PBS | FUJITSU |
获取价格 |
Memory Circuit, 2MX16, CMOS, PBGA73, PLASTIC, FBGA-73 | |
MB84VD22193EE-85-PBS | FUJITSU |
获取价格 |
SPECIALTY MEMORY CIRCUIT, PBGA73, PLASTIC, FBGA-73 | |
MB84VD22193EE-90 | FUJITSU |
获取价格 |
32M (x 8/x16) FLASH MEMORY & 4M (x 8/x16) STATIC RAM | |
MB84VD22193EE-90-PBS | FUJITSU |
获取价格 |
32M (x 8/x16) FLASH MEMORY & 4M (x 8/x16) STATIC RAM |