5秒后页面跳转
MB84LD23280EE-10-PBS PDF预览

MB84LD23280EE-10-PBS

更新时间: 2024-10-02 20:50:15
品牌 Logo 应用领域
富士通 - FUJITSU 静态存储器内存集成电路
页数 文件大小 规格书
49页 678K
描述
Memory Circuit, Flash+SRAM, 4MX16, CMOS, PBGA101, PLASTIC, FBGA-101

MB84LD23280EE-10-PBS 技术参数

是否Rohs认证: 不符合生命周期:Contact Manufacturer
包装说明:LFBGA, BGA101,12X14,32Reach Compliance Code:compliant
HTS代码:8542.32.00.71风险等级:5.76
最长访问时间:100 ns其他特性:512K X 16-BIT SRAM ALSO AVAILABLE
JESD-30 代码:R-PBGA-B101JESD-609代码:e0
长度:12 mm内存密度:67108864 bit
内存集成电路类型:MEMORY CIRCUIT内存宽度:16
混合内存类型:FLASH+SRAM功能数量:1
端子数量:101字数:4194304 words
字数代码:4000000工作模式:ASYNCHRONOUS
最高工作温度:85 °C最低工作温度:-25 °C
组织:4MX16封装主体材料:PLASTIC/EPOXY
封装代码:LFBGA封装等效代码:BGA101,12X14,32
封装形状:RECTANGULAR封装形式:GRID ARRAY, LOW PROFILE, FINE PITCH
峰值回流温度(摄氏度):NOT SPECIFIED电源:2.5 V
认证状态:Not Qualified座面最大高度:1.4 mm
最大待机电流:0.000006 A子类别:Other Memory ICs
最大压摆率:0.053 mA最大供电电压 (Vsup):2.7 V
最小供电电压 (Vsup):2.3 V标称供电电压 (Vsup):2.5 V
表面贴装:YES技术:CMOS
温度等级:OTHER端子面层:Tin/Lead (Sn/Pb)
端子形式:BALL端子节距:0.8 mm
端子位置:BOTTOM处于峰值回流温度下的最长时间:NOT SPECIFIED
宽度:11 mmBase Number Matches:1

MB84LD23280EE-10-PBS 数据手册

 浏览型号MB84LD23280EE-10-PBS的Datasheet PDF文件第2页浏览型号MB84LD23280EE-10-PBS的Datasheet PDF文件第3页浏览型号MB84LD23280EE-10-PBS的Datasheet PDF文件第4页浏览型号MB84LD23280EE-10-PBS的Datasheet PDF文件第5页浏览型号MB84LD23280EE-10-PBS的Datasheet PDF文件第6页浏览型号MB84LD23280EE-10-PBS的Datasheet PDF文件第7页 
FUJITSU SEMICONDUCTOR  
DATA SHEET  
DS05-50210-1E  
Stacked MCP (Multi-Chip Package) FLASH MEMORY & SRAM  
CMOS  
64 M (×8/×16) FLASH MEMORY &  
8 M (×8/×16) STATIC RAM  
MB84LD23280EA-10/MB84LD23280EE-10  
FEATURES  
Power supply voltage of 2.3 V to 2.7 V  
High performance  
100 ns maximum access time (Flash)  
85 ns maximum access time (SRAM)  
Operating Temperature  
25 °C to +85 °C  
Package 101-ball BGA  
(Continued)  
PRODUCT LINE UP  
Flash Memory  
SRAM  
Power Supply Voltage (V)  
Max. Address Access Time (ns)  
Max. CE Access Time (ns)  
Max. OE Access Time (ns)  
VCCf* = 2.3 to 2.7  
VCCs* = 2.3 to 2.7  
100  
100  
40  
85  
85  
45  
* : Both VCCf and VCCs must be in recommended operation range when either part is being accessed.  
PACKAGE  
101-ball plastic BGA  
(BGA-101P-M01)  

与MB84LD23280EE-10-PBS相关器件

型号 品牌 获取价格 描述 数据表
MB84LD23381EJ-10-PBS FUJITSU

获取价格

SPECIALTY MEMORY CIRCUIT, PBGA101, PLASTIC, FBGA-101
MB84LD23381EJ10-PBS FUJITSU

获取价格

Memory Circuit, Flash+SRAM, 4MX16, CMOS, PBGA101, PLASTIC, FBGA-101
MB84SD23280E-70PBS SPANSION

获取价格

64M (X16) FLASH MEMORY 8M (X16) SRAM
MB84SD23280FA SPANSION

获取价格

64M (X16) FLASH MEMORY 8M (X16) SRAM
MB84SD23280FA-70PBS SPANSION

获取价格

64M (X16) FLASH MEMORY 8M (X16) SRAM
MB84SD23280FA-70PBS-E1 SPANSION

获取价格

Memory Circuit, 4MX16, CMOS, PBGA73, PLASTIC, FBGA-73
MB84SD23280FE SPANSION

获取价格

64M (X16) FLASH MEMORY 8M (X16) SRAM
MB84SD23280FE-70 SPANSION

获取价格

64M (X16) FLASH MEMORY 8M (X16) SRAM
MB84SD23280FE-70PBS FUJITSU

获取价格

Memory Circuit, Flash+SRAM, 4MX16, CMOS, PBGA73, PLASTIC, FBGA-73
MB84SD23280FE-70PBS SPANSION

获取价格

Memory Circuit, Flash+SRAM, 4MX16, CMOS, PBGA73, PLASTIC, FBGA-73