是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
零件包装代码: | BGA | 包装说明: | LFBGA, |
针数: | 115 | Reach Compliance Code: | compliant |
HTS代码: | 8542.32.00.71 | 风险等级: | 5.92 |
其他特性: | FLASH IS ORGANIZED AS 8M X 16; FCRAM IS ORGANIZED AS 4M X 16 | JESD-30 代码: | R-PBGA-B115 |
JESD-609代码: | e0 | 长度: | 12 mm |
内存密度: | 134217728 bit | 内存集成电路类型: | MEMORY CIRCUIT |
内存宽度: | 16 | 功能数量: | 1 |
端子数量: | 115 | 字数: | 8388608 words |
字数代码: | 8000000 | 工作模式: | ASYNCHRONOUS |
最高工作温度: | 85 °C | 最低工作温度: | -30 °C |
组织: | 8MX16 | 封装主体材料: | PLASTIC/EPOXY |
封装代码: | LFBGA | 封装形状: | RECTANGULAR |
封装形式: | GRID ARRAY, LOW PROFILE, FINE PITCH | 峰值回流温度(摄氏度): | 240 |
认证状态: | Not Qualified | 座面最大高度: | 1.35 mm |
最大供电电压 (Vsup): | 1.95 V | 最小供电电压 (Vsup): | 1.7 V |
标称供电电压 (Vsup): | 1.8 V | 表面贴装: | YES |
技术: | CMOS | 温度等级: | OTHER |
端子面层: | TIN LEAD | 端子形式: | BALL |
端子节距: | 0.8 mm | 端子位置: | BOTTOM |
处于峰值回流温度下的最长时间: | 30 | 宽度: | 9 mm |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
MB84SF6H6H6L2-70 | SPANSION |
获取价格 |
3 Stacked MCP (Multi-Chip Package) FLASH & FLASH & FCRAM 128M (X16) Burst FLASH MEMORY & 1 | |
MB84SF6H6H6L2-70PBS | SPANSION |
获取价格 |
3 Stacked MCP (Multi-Chip Package) FLASH & FLASH & FCRAM 128M (X16) Burst FLASH MEMORY & 1 | |
MB84SF6H6H6L2-70PBS-E1 | SPANSION |
获取价格 |
Memory Circuit, 8MX16, CMOS, PBGA115, PLASTIC, FBGA-115 | |
MB84VA20 | FUJITSU |
获取价格 |
8M (x 8/x 16) FLASH MEMORY & 2M (x 8) STATIC RAM | |
MB84VA2000 | FUJITSU |
获取价格 |
8M (X 8) FLASH MEMORY & 2M (X 8) STATIC RAM | |
MB84VA2000-10 | FUJITSU |
获取价格 |
8M (X 8) FLASH MEMORY & 2M (X 8) STATIC RAM | |
MB84VA2001-10 | FUJITSU |
获取价格 |
8M (X 8) FLASH MEMORY & 2M (X 8) STATIC RAM | |
MB84VA2002 | FUJITSU |
获取价格 |
8M (x 8/x 16) FLASH MEMORY & 2M (x 8) STATIC RAM | |
MB84VA2002-10 | FUJITSU |
获取价格 |
8M (x 8/x 16) FLASH MEMORY & 2M (x 8) STATIC RAM | |
MB84VA2003 | FUJITSU |
获取价格 |
8M (x 8/x 16) FLASH MEMORY & 2M (x 8) STATIC RAM |