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MB10S-TP PDF预览

MB10S-TP

更新时间: 2024-11-17 11:13:43
品牌 Logo 应用领域
美微科 - MCC 整流二极管桥式整流二极管光电二极管
页数 文件大小 规格书
3页 111K
描述
0.5Amp Single Phase Glass Passivated Bridge Rectifier 50 to 1000 Volts

MB10S-TP 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Active包装说明:MBS-1, 4 PIN
针数:4Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.10.00.70
风险等级:0.87Is Samacsys:N
其他特性:UL RECOGNIZED最小击穿电压:1000 V
配置:BRIDGE, 4 ELEMENTS二极管元件材料:SILICON
二极管类型:BRIDGE RECTIFIER DIODE最大正向电压 (VF):1 V
JESD-30 代码:R-PDSO-G4JESD-609代码:e3
湿度敏感等级:1最大非重复峰值正向电流:35 A
元件数量:4相数:1
端子数量:4最高工作温度:150 °C
最低工作温度:-55 °C最大输出电流:0.5 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
认证状态:Not Qualified最大重复峰值反向电压:1000 V
子类别:Bridge Rectifier Diodes表面贴装:YES
端子面层:MATTE TIN (SN)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:10
Base Number Matches:1

MB10S-TP 数据手册

 浏览型号MB10S-TP的Datasheet PDF文件第2页浏览型号MB10S-TP的Datasheet PDF文件第3页 
M C C  
MB05S  
THRU  
MB10S  
TM  
ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents  
20736 Marilla Street Chatsworth  
ꢆꢋꢅꢌꢍꢎꢍꢍ  
ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
Micro Commercial Components  
Features  
0.5 Amp Single Phase  
Glass Passivated  
Bridge Rectifier  
Glass Passivated Diode Construction  
High Temperature Soldering Guaranteed:260oC/10 Second  
Saves Space On Printed Circuit Board  
Mechanical Data  
50 to 1000 Volts  
Lead Free Finish/RoHS Compliant (NOTE 1)("P" Suffix  
designates RoHS Compliant. See ordering information)  
Case Material:Molded Plastic. UL Flammability  
Classification Rating 94V-0 and MSL Rating 1  
MBS -1  
Teminals: Plated leads Solderable per MIL-STD-750,Method 2026  
Moisture Sensitiviy:Level 1 per J-STD-020C  
-
D
B
E
MCC  
Part  
Number  
Maximum  
Recurrent  
Maximum  
RMS  
Voltage  
Maximum  
DC  
Blocking  
Voltage  
50V  
+
Device  
Marking Peak Reverse  
Voltage  
F
C
A
MB05S  
MB1S  
MB2S  
MB4S  
MB6S  
MB8S  
MB10S  
MB05S  
MB1S  
MB2S  
MB4S  
MB6S  
MB8S  
MB10S  
50V  
100V  
200V  
400V  
600V  
800V  
1000V  
35V  
70V  
100V  
200V  
Notch in case  
140V  
280V  
420V  
480V  
700V  
K
400V  
600V  
M
800V  
1000V  
J
G
N
H
Electrical Characteristics @ 25OC Unless Otherwise Specified  
~
~
+
-
Average Forward  
Current  
IF(AV)  
0.5 A(2)  
0.8 A(3)  
35A  
See Fig.1  
Peak Forward Surge  
Current  
Maximum  
IFSM  
8.3ms, half sine  
Case Style  
ꢀꢁꢂꢃꢄꢅꢁꢆꢄꢅ  
Instantaneous  
Forward Voltage  
Maximum DC  
Reverse Current At  
Rated DC Blocking  
Voltage  
VF  
1.0V  
IFM = 0.4A;  
TA = 25OC  
ꢇ ꢇ ꢇ ꢇ ꢁꢄꢈ  
ꢉꢃꢅ  
ꢂꢂ  
ꢀꢁꢂ  
ꢂꢁꢄ  
.252  
ꢎꢏꢐꢑ  
ꢂꢊꢋ  
.275  
ꢎꢒꢏ6  
ꢂꢁꢄ  
6.40  
ꢓꢎꢔꢒ  
ꢂꢊꢋ  
7.00  
2.70  
4.20  
4.95  
0.80  
2.70  
0.20  
ꢄꢆꢌꢃ  
OC  
IR  
TA = 25  
5uA  
100uA  
C
D
.150  
.179  
.019  
.090  
.004  
.165  
.195  
.031  
.106  
.008  
3.80  
4.55  
0.50  
2.30  
0.10  
TA = 125 O  
C
85O /W(2)  
Typical Thermal  
Resistance  
per leg  
R
thJA  
C
OC  
(3)  
.027  
.058  
.195  
.039  
.043  
.062  
.205  
.049  
0.70  
1.47  
4.95  
0.99  
1.10  
1.57  
5.21  
1.24  
RthJA  
RthJL  
70 /W  
20OC/W(2)  
13pF  
M
N
Typical Junction  
Capacitance  
CJ  
Measured at  
1.0MHz, VR=4.0V  
t<8.30ms  
.006  
.016  
0.15  
0.41  
I2t  
TJ  
5.0A2s  
-55to+150  
Mounting Pad Layout  
Rating For Fusing  
Operating Junction  
and Storage  
0.023 MIN.  
(0.58 MIN.)  
OC  
TSTG  
Temperature Range  
Notes: 1. High Temperature Solder Exemption Applied, see EU Directive Annex Notes 7  
0.272 MAX.  
(6.91 MAX.)  
2. On glass epoxy P.C.B. mounted on 0.05 x 0.05”(1.3 x 1.3mm)pads  
3. On aluminum substrate P.C.B. with an area of 0.8” x 0.8”(20 x 20mm) mounted  
on 0.05 x 0.05”(1.3x 1.3mm) solder pad  
0.030 MIN.  
(0.76 MIN.)  
0.105 (2.67)  
0.095 (2.41)  
www.mccsemi.com  
1 of 3  
Revision: 12  
2009/10/22  

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