2:1 Multiplexers and 1:2 Demultiplexers with
Loopback
ABSOLUTE MAXIMUM RATINGS
CC
V
to GND...........................................................-0.3V to +4.1V
Junction-to-Case Thermal Resistance
IN_ _, IN_ _, OUT_ _, OUT_ _, EN_ _, _SEL, LB_SEL_
to GND........................................................-0.3V to (V
IN_ _ to IN_ _.......................................................................... 3V
Short-Circuit Duration (OUT_ _, OUT_ _) ...................Continuous
28-Pin 5mm x 5mm Thin QFN......................................+2°C/W
Operating Temperature Range ...........................-40°C to +85°C
Junction Temperature......................................................+150°C
Storage Temperature Range.............................-65°C to +150°C
ESD Protection (Human Body Model)
+ 0.3V)
CC
Continuous Power Dissipation (T = +70°C)
A
32-Pin TQFP (derate 13.1mW/°C above +70°C)........1047mW
28-Pin 5mm x 5mm Thin QFN
(IN_ _, IN_ _, OUT_ _, OUT_ _, EN_ _, SEL_, LB_SEL_) .. 2ꢀV
Soldering Temperature (10s)...........................................+300°C
(derate 20.8mW/°C above +70°C).............................1667mW
Junction-to-Ambient Thermal Resistance in Still Air
32-Pin TQFP............................................................+76.4°C/W
28-Pin 5mm x 5mm Thin QFN....................................+48°C/W
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
DC ELECTRICAL CHARACTERISTICS
(V
= +3.0V to +3.6V, R = 100Ω 1ꢁ, EN_ _ = V , V
= +0.05V to (V
- 0.6V) (MAX9394), V
= +0.06V to (V
= +1.2V, T = +25°C.)
CM A
- 0.05V)
CC
L
CC CM
CC
CM
CC
(MAX9395), T = -40°C to +85°C, unless otherwise noted. Typical values are at V
= +3.3V, |V | = 0.2V, V
A
CC
ID
(Notes 1, 2, and 3)
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
LVCMOS/LVTTL INPUTS (EN_ _, BSEL, LB_SEL_)
Input High Voltage
V
2.0
0
V
V
V
IH
CC
Input Low Voltage
V
0.8
20
10
IL
Input High Current
I
V
V
= +2.0V to V
CC
0
µA
µA
IH
IN
IN
Input Low Current
I
= 0V to +0.8V
0
IL
DIFFERENTIAL INPUTS (IN_ _, IN_ _)
Differential Input Voltage
V
V
> 0V and V
< V , Figure 1
0.1
3.0
V
V
ID
ILD
IHD
CC
V
-
-
CC
MAX9394
MAX9395
0.05
0.6
Input Common-Mode Range
V
CM
V
CC
0.6
0.05
MAX9394
MAX9395
|V | < 3.0V
-75
-10
10
ID
I
I
,
IN_ _
Input Current
µA
IN_ _
|V | < 3.0V
ID
100
LVDS OUTPUTS (OUT_ _, OUT_ _)
Differential Output Voltage
V
R = 100Ω, Figure 2
250
350
1.0
450
50
mV
mV
V
OD
L
Change in Magnitude of V
OD
Between Complementary Output
States
∆V
Figure 2
Figure 2
Figure 2
OD
Offset Common-Mode Voltage
V
1.125
1.25
1.0
1.375
50
OS
Change in Magnitude of V
OS
Between Complementary Output
States
∆V
mV
OS
2
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