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MASMLG8.5AE3

更新时间： 2024-11-03 18:17:55
品牌 Logo 应用领域
美高森美 - MICROSEMI 局域网光电二极管
页数 文件大小 规格书
12页 950K
描述
Trans Voltage Suppressor Diode, 3000W, 8.5V V(RWM), Unidirectional, 1 Element, Silicon, DO-215AB, ROHS COMPLIANT, PLASTIC PACKAGE-2

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MASMLG8.5AE3 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Active零件包装代码：DO-215AB
包装说明：R-PDSO-G2针数：2
Reach Compliance Code：compliantECCN代码：EAR99
HTS代码：8541.10.00.50风险等级：5.4
最大击穿电压：10.4 V最小击穿电压：9.44 V
配置：SINGLE二极管元件材料：SILICON
二极管类型：TRANS VOLTAGE SUPPRESSOR DIODEJEDEC-95代码：DO-215AB
JESD-30 代码：R-PDSO-G2JESD-609代码：e3
湿度敏感等级：1最大非重复峰值反向功率耗散：3000 W
元件数量：1端子数量：2
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：260
极性：UNIDIRECTIONAL最大功率耗散：1.61 W
认证状态：Not Qualified最大重复峰值反向电压：8.5 V
表面贴装：YES技术：AVALANCHE
端子面层：Matte Tin (Sn)端子形式：GULL WING
端子位置：DUAL处于峰值回流温度下的最长时间：40
Base Number Matches：1

MASMLG8.5AE3 数据手册

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MSMLG5.0A – MSMLG170CAe3, MSMLJ5.0A – MSMLJ170CAe3 Surface  
Mount 3000 Watt Transient Voltage Suppressor  
1
Product Overview  
The MSMLG5.0A–MSMLG170CA and the MSMLJ5.0A–MSMLJ170CA series of high-reliability transient  
voltage suppressors (TVS) protect circuits from voltage spikes containing up to 3000 W (10/1000 μs  
model pulse). The SMLG gull-wing design in the DO-215AB package allows for visible solder connections.  
The SMLJ J-bend design in the DO-214AB package allows for greater PC board mounting density.  
Selections include unidirectional and bidirectional as well as RoHS-compliant versions. These are  
available with a variety of upscreening options for enhanced reliability. They protect against the  
secondary effects of lightning per IEC61000-4-5 and against voltage pulses from inductive switching  
environments and induced by RF radiation. Since their response time is virtually instantaneous, they can  
also be used in protection from ESD and EFT per IEC61000-4-2 and IEC61000-4-4.  
For the latest information, visit our website www.microsemi.com.  
1.1  
Features  
The following are key features of the MSMLG5.0A through MSMLG170CAe3 and the MSMLJ5.0A  
through MSMLJ170CAe3 devices:  
High-reliability devices with fabrication and assembly lot traceability for all M prefix devices  
All devices are 100% surge tested  
3σ lot norm screening performed on standby current (ID) for all M prefix devices  
Available in both unidirectional and bidirectional versions  
Moisture classification is “Level 1” with no dry pack required per IPC/JEDEC J-STD-020B for all M  
prefix devices.  
Enhanced reliability screening options with M prefix are available in reference to MIL-PRF-19500.  
Refer to High Reliability Up-Screened Plastic Products Portfolio for more details on the screening  
options (see Part Nomenclature for all available options).  
RoHS compliant versions available  
Axial-lead equivalent packages for thru-hole mounting are available as M5KP5.0A to M5KP110CA  
with 5000 W rating (contact Microsemi for other surface mount options).  
Microsemi Proprietary and Confidential. MSMLG5.0A–MSMLG170CAe3, MSMLJ5.0A–MSMLJ170CAe3 Datasheet Revision D  
1
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与MASMLG8.5AE3相关器件

型号 品牌 获取价格 描述 数据表
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MASMLG8.5CATR MICROSEMI

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MASMLG8.5E3 MICROSEMI

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 		Trans Voltage Suppressor Diode, 3000W, 8.5V V(RWM), Unidirectional, 1 Element, Silicon, DO
MASMLG85A MICROSEMI

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 		Trans Voltage Suppressor Diode, 3000W, 85V V(RWM), Unidirectional, 1 Element, Silicon, DO-
MASMLG85A/TR MICROSEMI

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 		Trans Voltage Suppressor Diode, 3000W, 85V V(RWM), Unidirectional, 1 Element, Silicon, DO-
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