Datasheet > MASMCJ9.0CAE3TR

MASMCJ9.0CAE3TR

更新时间： 2024-11-24 20:57:43

品牌	Logo	应用领域
美高森美 - MICROSEMI		局域网光电二极管电视
页数	文件大小	规格书
4页	186K
描述
1500W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AB, PLASTIC, SMCJ, 2 PIN

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MASMCJ9.0CAE3TR 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Active	零件包装代码：	DO-214AB
包装说明：	R-PDSO-J2	针数：	2
Reach Compliance Code：	unknown	风险等级：	5.42
其他特性：	HIGH RELIABILITY	最大击穿电压：	11.1 V
最小击穿电压：	10 V	配置：	SINGLE
二极管元件材料：	SILICON	二极管类型：	TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95代码：	DO-214AB	JESD-30 代码：	R-PDSO-J2
JESD-609代码：	e3	湿度敏感等级：	1
最大非重复峰值反向功率耗散：	1500 W	元件数量：	1
端子数量：	2	最高工作温度：	150 °C
最低工作温度：	-65 °C	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	SMALL OUTLINE
峰值回流温度（摄氏度）：	NOT SPECIFIED	极性：	BIDIRECTIONAL
最大功率耗散：	1.56 W	认证状态：	Not Qualified
参考标准：	MIL-19500	最大重复峰值反向电压：	9 V
表面贴装：	YES	技术：	AVALANCHE
端子面层：	MATTE TIN	端子形式：	J BEND
端子位置：	DUAL	处于峰值回流温度下的最长时间：	NOT SPECIFIED
Base Number Matches：	1

MASMCJ9.0CAE3TR 数据手册

TECHNICAL DATA SHEET

Gort Road Business Park, Ennis, Co. Clare, Ireland.

Tel: +353 (0) 65 6840044, Fax: +353 (0) 65 6822298

6 Lake Street, Lawrence, MA 01841

Tel: 1-800-446-1158 / (978) 794-1666, Fax: (978) 6890803

Website: http://www.microsemi.com

- High Reliability controlled devices

SURFACE MOUNT 1500 Watt

Transient Voltage Suppressor

- Unidirectional (A) and Bidirectional (CA) construction

- Available in both J-bend and Gull-wing terminations

- Selections for 5.0 to 170 V standoff voltages (V_WM

)

LEVELS

M, MA, MX, MXL

DEVICES

MSMCJ5.0A thru MSMCJ170CA, e3

and MSMCG5.0A thru MSMCG170CA, e3

FEATURES

High reliability controlled devices with fabrication and assembly lot traceability

100 % surge tested devices

Optional upscreening available by replacing the M prefix with MA, MX or MXL prefixes.

These prefixes specify various screening and conformance inspection options based on

MIL-PRF-19500. Refer to MicroNote 129 for more details on the screening options.

Axial-lead equivalent packages for thru-hole mounting available as 1.5KE6.8A to

1.5KE200CA or 1N6267 thru 1N6303A and 1N5908 (consult factory for other surface mount

options).

Refer to table below

for dimensions

Moisture classification is Level 1 with no dry pack required per IPC/JEDEC J-STD-020B

RoHS compliant devices available by adding an “e3” suffix

3σ lot norm screening performed on Standby Current I_D

APPLICATIONS / BENEFITS

Protection from switching transients and induced RF

Protection from ESD and EFT per IEC 61000-4-2 and IEC 61000-4-4

Secondary lightening protection per IEC 61000-4-5 with 42 Ohms source impedance:

Class 1: MSMC5.0A to MSMC170CA

Class 2: MSMC5.0A to MSMC150CA

Class 3: MSMC5.0A to MSMC75CA

Class 4: MSMC5.0A to MSMC36CA

Secondary lightening protection per IEC 61000-4-5 with 12 Ohms source impedance:

Class 1: MSMC5.0A to MSMC90CA

Class 2: MSMC5.0A to MSMC45CA

Class 3: MSMC5.0A to MSMC24CA

Class 4: MSMC5.0A to MSMC11CA

Secondary lightening protection per IEC 61000-4-5 with 2 Ohms source impedance:

Class 2: MSMC5.0A to MSMC22CA

Class 3: MSMC5.0A to MSMC10CA

MAXIMUM RATINGS

Peak Pulse Power dissipation at 25 ºC: 1500 watts at 10/1000 μs (also see Figures 1,2, and

3) with impulse repetition rate (duty factor) of 0.01 % or less

tclamping (0 volts to V_BRmin.): < 100 ps theoretical for unidirectional and <5 ns for bidirectional

Operating and Storage temperature: -65 ºC to +150 ºC

Thermal resistance: 20 ºC/W junction to lead, or 80 ºC/W junction to ambient when mounted

on FR4 PC board (1oz Cu) with recommended footprint (see page 2)

Steady-State Power dissipation: 6 watts at TL = 30 ºC, or 1.56 watts at TA = 25 ºC when

mounted on FR4 PC board with recommended footprint (see page 2)

Forward Surge: 200 Amps peak impulse of 8.3 ms half-sine wave at 25 ºC (unidirectional

only)

Solder temperatures: 260 ºC for 10 s (maximum)

RF01001 Rev B, Sept 2011

High Reliability Product Group

Page 1 of 4

12 3 4

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与MASMCJ9.0CAE3TR相关器件

型号	品牌	获取价格	描述	数据表
MASMCJ9.0CE3	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 1500W, 9V V(RWM), Bidirectional, 1 Element, Silicon, DO-21
MASMCJ9.0CE3TR	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 1500W, 9V V(RWM), Bidirectional, 1 Element, Silicon, DO-21
MASMCJ9.0CTR	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 1500W, 9V V(RWM), Bidirectional, 1 Element, Silicon, DO-21
MASMCJ9.0E3	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 1500W, 9V V(RWM), Unidirectional, 1 Element, Silicon, DO-2
MASMCJ9.0E3TR	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 1500W, 9V V(RWM), Unidirectional, 1 Element, Silicon, DO-2
MASMCJ9.0TR	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 1500W, 9V V(RWM), Unidirectional, 1 Element, Silicon, DO-2
MASMCJ90	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 1500W, 90V V(RWM), Unidirectional, 1 Element, Silicon, DO-
MASMCJ90A/TR	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 1500W, 90V V(RWM), Unidirectional, 1 Element, Silicon, DO-
MASMCJ90AE3/TR	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 1500W, 90V V(RWM), Unidirectional, 1 Element, Silicon, DO-
MASMCJ90AE3TR	MICROSEMI	获取价格	1500W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AB, PLASTIC, SMCJ, 2 PIN

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