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MASMCJ8.0AE3/TR PDF预览

MASMCJ8.0AE3/TR

更新时间: 2024-11-21 07:15:03
品牌 Logo 应用领域
美高森美 - MICROSEMI 局域网光电二极管
页数 文件大小 规格书
7页 439K
描述
Trans Voltage Suppressor Diode, 1500W, 8V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AB, PLASTIC, SMCJ, 2 PIN

MASMCJ8.0AE3/TR 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:R-PDSO-J2Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.50
风险等级:5.22其他特性:HIGH RELIABILITY
最大击穿电压:9.83 V最小击穿电压:8.89 V
击穿电压标称值:9.36 V最大钳位电压:13.6 V
配置:SINGLE二极管元件材料:SILICON
二极管类型:TRANS VOLTAGE SUPPRESSOR DIODEJEDEC-95代码:DO-214AB
JESD-30 代码:R-PDSO-J2JESD-609代码:e3
湿度敏感等级:1最大非重复峰值反向功率耗散:1500 W
元件数量:1端子数量:2
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性:UNIDIRECTIONAL最大功率耗散:1.56 W
认证状态:Not Qualified参考标准:MIL-19500
最大重复峰值反向电压:8 V子类别:Transient Suppressors
表面贴装:YES技术:AVALANCHE
端子面层:Matte Tin (Sn) - annealed端子形式:J BEND
端子位置:DUAL处于峰值回流温度下的最长时间:40
Base Number Matches:1

MASMCJ8.0AE3/TR 数据手册

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