Datasheet > MAS5114FB

MAS5114FB

更新时间： 2024-11-15 20:48:35

品牌	Logo	应用领域
DYNEX		静态存储器
页数	文件大小	规格书
12页	114K
描述
SRAM

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中文翻译

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技术参数
数据手册

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MAS5114FB 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.63
Base Number Matches：	1

MAS5114FB 数据手册

MA5114

Radiation hard 1024x4 Bit Static RAM

Replaces June 1999 version, DS3591-4.0

DS3591-5.0 January 2000

The MA5114 4k Static RAM is configured as 1024 x 4 bits and

manufactured using CMOS-SOS high performance, radiation hard,

3µm technology.

Thedesignusesa6transistorcellandhasfullstaticoperationwith

noclockortimingstroberequired.Addressinputbuffersaredeselected

when Chip Select is in the HIGH state.

FEATURES

■ 3µm CMOS-SOS Technology

■ Latch-up Free

■ Fast Access Time 90ns Typical

■ Total Dose 10⁶Rad(Si)

■ Transient Upset >10¹⁰Rad(Si)/sec

■ SEU <10^-10Errors/bitday

■ Single 5V Supply

Operation Mode CS WE

I/O

Power

Read

Write

D OUT

D IN

ISB1

■ Three State Output

Standby

High Z

ISB2

■ Low Standby Current 50µA Typical

■ -55°C to +125°C Operation

Figure 1: Truth Table

■ All Inputs and Outputs Fully TTL or CMOS

Compatible

■ Fully Static Operation

■ Data Retention at 2V Supply

Figure 2: Block Diagram

1/12

12 3 4 5 6 7...12

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