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MART100KP75AE3 PDF预览

MART100KP75AE3

更新时间: 2024-11-21 14:31:19
品牌 Logo 应用领域
美高森美 - MICROSEMI 局域网二极管
页数 文件大小 规格书
7页 427K
描述
Trans Voltage Suppressor Diode, 100000W, 75V V(RWM), Unidirectional, 1 Element, Silicon, ROHS COMPLIANT, PLASTIC PACKAGE-2

MART100KP75AE3 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Active包装说明:O-PALF-W2
针数:2Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.50
风险等级:5.27Is Samacsys:N
最大击穿电压:92.1 V最小击穿电压:83.3 V
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 代码:O-PALF-W2JESD-609代码:e3
最大非重复峰值反向功率耗散:100000 W元件数量:1
端子数量:2封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:LONG FORM
峰值回流温度(摄氏度):NOT SPECIFIED极性:UNIDIRECTIONAL
最大功率耗散:1.61 W认证状态:Not Qualified
参考标准:MIL-19500最大重复峰值反向电压:75 V
表面贴装:NO技术:AVALANCHE
端子面层:MATTE TIN端子形式:WIRE
端子位置:AXIAL处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

MART100KP75AE3 数据手册

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