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MAC5114CB PDF预览

MAC5114CB

更新时间: 2024-11-28 14:31:11
品牌 Logo 应用领域
DYNEX 静态存储器
页数 文件大小 规格书
12页 114K
描述
SRAM

MAC5114CB 技术参数

生命周期:Contact Manufacturer包装说明:,
Reach Compliance Code:unknownECCN代码:3A001.A.2.C
HTS代码:8542.32.00.41风险等级:5.63
Base Number Matches:1

MAC5114CB 数据手册

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MA5114  
Radiation hard 1024x4 Bit Static RAM  
Replaces June 1999 version, DS3591-4.0  
DS3591-5.0 January 2000  
The MA5114 4k Static RAM is configured as 1024 x 4 bits and  
manufactured using CMOS-SOS high performance, radiation hard,  
3µm technology.  
Thedesignusesa6transistorcellandhasfullstaticoperationwith  
noclockortimingstroberequired.Addressinputbuffersaredeselected  
when Chip Select is in the HIGH state.  
FEATURES  
3µm CMOS-SOS Technology  
Latch-up Free  
Fast Access Time 90ns Typical  
Total Dose 106 Rad(Si)  
Transient Upset >1010 Rad(Si)/sec  
SEU <10-10 Errors/bitday  
Single 5V Supply  
Operation Mode CS WE  
I/O  
Power  
Read  
Write  
L
L
H
L
D OUT  
D IN  
ISB1  
Three State Output  
Standby  
H
X
High Z  
ISB2  
Low Standby Current 50µA Typical  
-55°C to +125°C Operation  
Figure 1: Truth Table  
All Inputs and Outputs Fully TTL or CMOS  
Compatible  
Fully Static Operation  
Data Retention at 2V Supply  
Figure 2: Block Diagram  
1/12  

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