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SEMICONDUCTOR TECHNICAL DATA
Silicon Bidirectional 40 Amperes RMS
Triode Thyristors
. . . designed primarily for full-wave ac control applications such as lighting systems,
heater controls, motor controls and power supplies.
TRIACs
40 AMPERES RMS
200 thru 800 VOLTS
•
•
•
Blocking Voltage to 800 Volts
All Diffused and Glass-Passivated Junctions for Parameter Uniformity and Stability
Gate Triggering Guaranteed in Three Modes (MAC224 Series) or Four Modes
(MAC224A Series)
MT2
MT1
G
CASE 221A-04
(TO-220AB)
STYLE 4
MAXIMUM RATINGS (T = 25°C unless otherwise noted.)
J
Rating
Symbol
Value
Unit
(1)
Peak Repetitive Off-State Voltage
V
DRM
Volts
(T = –40 to 125°C,
J
1/2 Sine Wave 50 to 60 Hz, Gate Open)
MAC224-4, MAC224A4
MAC224-6, MAC224A6
MAC224-8, MAC224A8
MAC224-10, MAC224A10
200
400
600
800
(2)
On-State RMS Current (T = 75°C)
I
40
Amps
Amps
C
T(RMS)
(Full Cycle Sine Wave 50 to 60 Hz)
Peak Non-repetitive Surge Current
I
350
TSM
(One Full Cycle, 60 Hz, T = 125°C)
J
2
I t
2
A s
Circuit Fusing (t = 8.3 ms)
500
Peak Gate Current (t
Peak Gate Voltage (t
Peak Gate Power (t
2 µs)
2 µs)
2 µs)
I
±2
Amps
Volts
Watts
Watts
°C
GM
V
P
±10
20
GM
GM
Average Gate Power (T = 75°C, t
8.3 ms)
P
0.5
C
G(AV)
Operating Junction Temperature Range
Storage Temperature Range
Mounting Torque
T
J
–40 to 125
–40 to 150
8
T
°C
stg
—
in. lb.
1. V
for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source
(cont.)
DRM
such that the voltage ratings of the devices are exceeded.
2. This device is rated for use in applications subject to high surge conditions. Care must be taken to insure proper heat sinking when thedevice
is to be used at high sustained currents. (See Figure 1 for maximum case temperatures.)
1
Motorola Thyristor Device Data
Motorola, Inc. 1995