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MAATSS0002TR PDF预览

MAATSS0002TR

更新时间: 2024-11-24 22:38:55
品牌 Logo 应用领域
泰科 - TE /
页数 文件大小 规格书
5页 307K
描述
Digital Attenuator, 31.0 dB, 1 dB LSB, 5-Bit, 800 - 2500 MHz

MAATSS0002TR 技术参数

是否Rohs认证: 不符合生命周期:Transferred
Reach Compliance Code:unknown风险等级:5.15
Is Samacsys:N安装特点:SURFACE MOUNT
端子数量:16最高工作温度:85 °C
最低工作温度:-40 °C封装主体材料:PLASTIC/EPOXY
封装等效代码:SSOP16,.25电源:3/5 V
子类别:RF/Microwave Attenuators表面贴装:YES
技术:GAASBase Number Matches:1

MAATSS0002TR 数据手册

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Digital Attenuator, 31.0 dB, 1 dB  
LSB, 5-Bit, 800 - 2500 MHz  
V 2.00  
Features  
Functional Schematic  
n
n
n
n
5 Bits, 1 dB Steps  
Excellent Accuracy  
Positive Control (+3 to +5V)  
Small Low Cost QSOP-16 (SSOP-16) Package  
VC5  
VC4  
VC3  
VC2  
VC1  
1dB  
2dB  
16dB  
Description  
RFIN  
RFOUT  
The M/A-COM MAATSS0002 is a 1 dB step GaAs MMIC  
digital attenuator with 31.0 dB dynamic range in a low cost  
QSOP-16 (SSOP-16) package. It requires external DC  
blocking capacitors on the RF ports, positive supply voltage  
and five individual bit control voltages. It is particularly  
suited where high attenuation accuracy, low insertion loss  
and low intermodulation products are required. Typical  
applications include base stations, wireless data, and  
wireless local loop gain level control circuits.  
Absolute Maximum Ratings 1  
Parameter  
Absolute Maximum  
Max Input Power  
0.8 - 2.5 GHz  
+34 dBm  
Operating Temperature  
Storage Temperature  
-40°C to +85°C  
-65°C to +150°C  
The MAATSS0002 is fabricated using M/A-COM’s GaAs  
1. Operation of this device above any one of these  
parameters may cause permanent damage.  
1.0 micron process.  
The process features full chip  
passivation for increased performance and reliability.  
Electrical Specifications: TA = 25 °C, Z0 = 50 W  
Parameter  
Conditions  
Frequency  
Units  
Min.  
Typ.  
Max.  
Insertion Loss  
0.8 - 1.5 GHz  
1.5 - 2.0 GHz  
2.0 - 2.5 GHz  
dB  
dB  
dB  
1.8  
2.2  
2.7  
1.9  
2.3  
2.9  
Accuracy  
0.8 - 1.5 GHz  
1.5 - 2.0 GHz  
2.0 - 2.5 GHz  
± (0.3 dB + 4% of Attenuation)  
± (0.3 dB + 3% of Attenuation)  
± (0.4 dB + 3% of Attenuation)  
Step Change  
0.8 - 1.5 GHz  
1.5 - 2.0 GHz  
2.0 - 2.5 GHz  
dB  
dB  
dB  
0.4  
0.4  
0.4  
1.0  
1.0  
1.0  
1.4  
1.6  
1.8  
Attenuation Range  
VSWR  
0.8 - 2.5 GHz  
dB  
dB  
µS  
µS  
mV  
30.0  
31.0  
32.2  
2.0:1  
0.8 - 2.5 GHz  
Trise, Tfall  
Ton, Toff  
10% to 90% RF, 90% to 10% RF  
50% Control to 10% / 90% RF  
In Band  
2
2
Transients  
P1dB  
120  
+3V  
+5V  
0.8 - 2.5 GHz  
0.8 - 2.5 GHz  
dBm  
dBm  
15  
18  
IP3  
+3V Input Power up to + 5 dBm  
+5V Input Power up to +5 dBm  
0.8 - 2.5 GHz  
0.8 - 2.5 GHz  
dBm  
dBm  
34  
43  
Control Voltages  
Vlow = 0.0 ± 0.2V @ 20 µA, 40 µA Max.  
Vhigh = +3 ± 0.2V or +5V ± 0.2V @ 20 µA, 40 µA Max.  
Vs = Vhigh @ 200 µA Max  

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