Zener Diodes
MAZ8000Series
Silicon planar type
Unit : mm
For stabilization of power supply
K
A
I Features
•
Extremely low noise voltage caused from the diode (2.4V to 39V,
1/3 to 1/10 of our conventional MAZ3000 series)
Extremely good rising performance (in the low-current range)
Easy-to-select the optimum diode because of their finely divided
zener-voltage ranks
Guaranteed reliability, equivalent to that of conventional products
(Mini type package)
Allowing to reduce the mounting area, thickness and weight sub-
stantially, compared with those of the conventional products
Allowing both reflow and flow mode of automatic soldering
Allowing automatic mounting by an existing chip mounter
1
2
•
•
•
•
0.4 0.1
0.4 0.1
1.7 0.1
2.5 0.2
•
•
1 : Anode
2 : Cathode
S-Mini Type Package (2-pin)
I Absolute Maximum Ratings Ta = 25°C
Marking Symbol
Parameter
Symbol
IFRM
Ptot
Rating
200
Unit
mA
mW
°C
Refer to the list of the electrical
characteristics within part numbers
(Example) MAZ8082-H : 8^2
Repetitive peak forward current
Total power dissipation*
Junction temperature
Storage temperature
150
Tj
150
Note) L/M/H marked products will be sup-
plied unless other wise specified
Tstg
−55 to +150
°C
Note)
* : With a printed-circuit board
1
I Common Electrical Characteristics Ta = 25°C*
Parameter
Symbol
VF
Conditions
Min
Typ
0.9
Max
1.0
Unit
V
Forward voltage
IF = 10 mA
2
Zener voltage*
VZ
IZ ·················· Specified value
IZ ·················· Specified value
IZ ·················· Specified value
VR ··············· Specified value
IZ ·················· Specified value
V
Operating resistance
RZK
RZ
Ω
Refer to the list of the
electrical characteristics
within part numbers
Ω
Reverse current
IR
µA
mV/°C
3
*
Temperature coefficient of zener voltage
SZ
Note) 1.Rated input/output frequency: 5 MHz
1
2.* : The VZ value is for the temperature of 25°C. In other cases, carry out the temperature compensation.
2
3
*
*
: Guaranteed at 20 ms after power application.
: Tj = 25°C to 150°C
1