Datasheet > MA729WS

MA729WS

更新时间： 2025-07-15 14:54:35

品牌	Logo	应用领域
先科 - SWST		肖特基二极管
页数	文件大小	规格书
3页	277K
描述
肖特基二极管

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中文翻译

获取价格

数据手册

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MA729WS 数据手册

MA729WS

Silicon Epitaxial Schottky Barrier Diode

PINNING

DESCRIPTION

Cathode

Features

• Super-high speed switching circuit

• Small current rectification

Anode

Top View

Simplified outline SOD-323 and symbol

Absolute Maximum Ratings (T_a= 25℃)

Parameter

Symbol

V_RRM

Value

Unit

Repetitive Peak Reverse Voltage

Reverse Voltage

V_R

I_F(AV)

Average Rectified Forward Current

Maximum (Peak) Forward Current

Non-Repetitive Peak Forward Surge Current ¹⁾

Junction Temperature

200

I_FM

I_FSM

T_J

300

150

℃

Storage Temperature Range

T_stg

- 55 to + 150

¹⁾The peak-to-peak value in one cycle of 50 Hz sine-wave (non-repetitive)

Characteristics at T_a= 25℃

Parameter

Symbol

V_(BR)R

V_F

Min.

Typ.

Max.

Unit

Reverse Breakdown Voltage

at I_R= 100 µA

Forward Voltage

at I_F= 200 mA

0.55

Reverse Current

at V_R= 30 V

I_R

µA

Terminal Capacitance

at V_R= 0 V, f = 1 MHz

C_T

t_rr

Reverse Recovery Time

at I_F= I_R= 100 mA, I_rr= 10 mA, R_L= 100 Ω

1 / 3

Dated : 13/09/2022 Rev:03

12 3

中文翻译

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