Datasheet > MA44781

MA44781

更新时间： 2024-02-15 15:44:32

品牌	Logo	应用领域
泰科 - TE		二极管
页数	文件大小	规格书
2页	49K
描述
Dual Anti- Parallel Pair PIN Diode

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MA44781 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Active	包装说明：	O-CRDB-F2
针数：	2	Reach Compliance Code：	compliant
ECCN代码：	EAR99	HTS代码：	8541.10.00.80
风险等级：	5.32	应用：	SWITCHING
最小击穿电压：	60 V	配置：	COMPLEX
最大二极管电容：	3.5 pF	标称二极管电容：	0.325 pF
二极管元件材料：	SILICON	二极管类型：	PIN DIODE
JESD-30 代码：	O-CRDB-F2	元件数量：	4
端子数量：	2	最高工作温度：	125 °C
封装主体材料：	CERAMIC, METAL-SEALED COFIRED	封装形状：	ROUND
封装形式：	DISK BUTTON	峰值回流温度（摄氏度）：	260
最大功率耗散：	0.25 W	认证状态：	Not Qualified
反向测试电压：	6 V	子类别：	PIN Diodes
表面贴装：	YES	技术：	POSITIVE-INTRINSIC-NEGATIVE
端子形式：	FLAT	端子位置：	RADIAL
处于峰值回流温度下的最长时间：	NOT SPECIFIED

MA44781 数据手册

Dual Anti- Parallel Pair PIN Diode

MA44781

Features

•

Surface Mount Packages

Absolute Maximum Ratings @ T_A=+25 °C

(Unless Otherwise Noted) ¹

Anti-Parallel Pair Construction

SPC Process for Superior C-V Repeatability

Designed for MRI applications

Parameter

Reverse Voltage

Absolute Maximum

60V

Lead-Free (RoHs Compliant) equivalents

available with 260°C reflow compatibility

100 mA³

Forward Current (per each diode)

Total Power Dissipation²

Operating Temperature

Storage Temperature

250 mW

Description

The MA44781 is a silicon PIN diodes in surface

mount packages. There are two sets of two PIN di-

ode pairs constructed in opposing configurations.

The package is sealed with a non-conductive epoxy

resin and is suitable for surface mount applications.

-55 °C to +125 °C

1. Operation of this device above any one of these parameters

may cause permanent damage.

2. Please refer to application note M538 for surface mounting

instructions

3. Total current per diode= I (rms) + I (dc) @ +25C

Applications

The MA44781 Device is well suited for MRI Passive

switching applications. The PIN Diodes become high

Q, R-C elements under small signal and

behave as effective passive rectifiers or short

circuits under high RF Signal to tune and de-tune the

resonant MRI tank circuit. The anti-parallel

doublet arrangement provides for more efficient RF

power handling.

Schematic

Internal Construction

Electrical Specifications @ T_A= +25 °C

Breakdown Voltage @ I_R= 10μA, V_b= 60V Minimum

Junction Capaci-

Forward Voltage

tance (per diode)

Delta Forward Voltage

Total Capacitance

Vr=0V

If=20uA

(between each diodes)

Part Num-

f=1MHz Vr=-6.0V

If = 20uA

ber

(pF)

(V)

(mV)

(pF)

MA44781

0.15-0.50pF

0.500-0.780

+/-30mV

1.5-3.5

M/A-COM Inc. and its affiliates reserve the right to make changes to the

product(s) or information contained herein without notice. M/A-COM makes

no warranty, representation or guarantee regarding the suitability of its

products for any particular purpose, nor does M/A-COM assume any liability

whatsoever arising out of the use or application of any product(s) or

information.

• North America Tel: 800.366.2266 / Fax: 978.366.2266

• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300

• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298

Visit www.macom.com for additional data sheets and product information.

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