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MA26P02 PDF预览

MA26P02

更新时间: 2024-11-29 19:55:43
品牌 Logo 应用领域
松下 - PANASONIC 开关二极管
页数 文件大小 规格书
2页 248K
描述
Pin Diode, Silicon, ROHS COMPLIANT, MINIATURE, ML-2-N1, 2 PIN

MA26P02 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete包装说明:R-XBCC-N2
针数:2Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.84应用:SWITCHING
配置:SINGLE最大二极管电容:0.5 pF
二极管元件材料:SILICON最大二极管正向电阻:2 Ω
二极管类型:PIN DIODEJESD-30 代码:R-XBCC-N2
元件数量:1端子数量:2
封装主体材料:UNSPECIFIED封装形状:RECTANGULAR
封装形式:CHIP CARRIER峰值回流温度(摄氏度):260
认证状态:Not Qualified表面贴装:YES
技术:POSITIVE-INTRINSIC-NEGATIVE端子形式:NO LEAD
端子位置:BOTTOM处于峰值回流温度下的最长时间:10
Base Number Matches:1

MA26P02 数据手册

 浏览型号MA26P02的Datasheet PDF文件第2页 
PIN diodes  
MA26P02  
Silicon epitaxial planar type  
For high frequency switch  
Unit: mm  
Features  
Small terminal capacitance Ct  
Low forward dynamic resistance rf  
Miniature package and surface mounting type  
0.01±0.005  
2
1
+0.01  
0.39  
1.00±0.05  
0.03  
Absolute Maximum Ratings T
a
= 25
°
C  
Parameter  
Reverse voltage  
Symbol  
Rating  
60  
Unit  
V
0.25±0.05  
0.25±0.05  
VR  
IF  
2
1
Forward current  
100  
mA  
°
C  
Junction temperature  
Storage temperature  
Tj  
150  
0.65±0.01  
0.05±0.03  
T
stg  
55 to +150  
°
C  
1: Anode  
2: Cathode  
ML-2-N1 Package  
Marking Symbol: P2  
Electrical Characteristics T
a
= 25
°
C±3
°
C  
Parameter  
Forward voltage  
Symbol  
Conditions  
Min  
Typ  
Max  
1.0  
Unit  
V
VF  
IR  
Ct  
rf  
IF = 10 mA  
V
R
= 60 V  
Reverse current  
100  
0.5  
nA  
pF  
Terminal capacitance  
Forward dynamic resistance  
VR = 1 V, f = 1 MHz  
IF = 10 mA, f = 100 MHz  
2.0  
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.  
Publication date: May 2005  
SKL00019AED  
1

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