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MA1N6295AE3

更新时间： 2024-12-01 18:09:27
品牌 Logo 应用领域
美高森美 - MICROSEMI 局域网二极管
页数 文件大小 规格书
5页 228K
描述
Trans Voltage Suppressor Diode, 1500W, 85.5V V(RWM), Unidirectional, 1 Element, Silicon, ROHS COMPLIANT, PLASTIC, CASE 1, 2 PIN

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MA1N6295AE3 技术参数

是否Rohs认证： 符合生命周期：Obsolete
包装说明：O-PALF-W2针数：2
Reach Compliance Code：unknownECCN代码：EAR99
HTS代码：8541.10.00.50风险等级：5.09
最大击穿电压：105 V最小击穿电压：95 V
外壳连接：ISOLATED配置：SINGLE
二极管元件材料：SILICON二极管类型：TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 代码：O-PALF-W2JESD-609代码：e3
湿度敏感等级：1最大非重复峰值反向功率耗散：1500 W
元件数量：1端子数量：2
封装主体材料：PLASTIC/EPOXY封装形状：ROUND
封装形式：LONG FORM峰值回流温度（摄氏度）：NOT SPECIFIED
极性：UNIDIRECTIONAL最大功率耗散：1.52 W
认证状态：Not Qualified最大重复峰值反向电压：85.5 V
表面贴装：NO技术：AVALANCHE
端子面层：MATTE TIN端子形式：WIRE
端子位置：AXIAL处于峰值回流温度下的最长时间：NOT SPECIFIED
Base Number Matches：1

MA1N6295AE3 数据手册

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1N6267 thru 1N6303A, e3  
1.5KE6.8 thru 1.5KE400CA, e3  
Unidirectional & Bidirectional  
Transient Voltage Suppressors  
S C O T T S D A L E D I V I S I O N  
DESCRIPTION  
APPEARANCE  
The Transient Voltage Suppressor (TVS) series for 1N5908 & 1N6267-1N6303A  
are JEDEC registered selections for unidirectional devices. The popular series of  
1.5KE6.8-1.5KE400CA offers similar voltages with an extended voltage range  
and also provides bidirectional options with a C or CA suffix. All have the same  
high Peak Pulse Power rating of 1500 W and extremely fast response time. They  
can protect from secondary lightning effects per IEC61000-4-5 and class levels  
described herein as well as inductive switching environments and induced RF  
protection. Since their response time is virtually instantaneous, they can also  
protect from ESD and EFT per IEC61000-4-2 and IEC61000-4-4.  
CASE 1  
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com  
FEATURES  
APPLICATIONS / BENEFITS  
•
•
Economical TVS series for thru-hole mounting  
• Protection from switching transients and induced RF  
Available in both Unidirectional and Bidirectional  
(1.5KE series add C or CA suffix for Bidirectional)  
• Protection from ESD and EFT per IEC 61000-4-2 and  
IEC 61000-4-4 with fast response  
•
•
•
Voltages from 6.8 to 400 V Breakdown (VBR  
)
• Secondary lightning protection per IEC61000-4-5 with  
42 Ohms source impedance:  
Suppresses transients up to 1500 watts @ 10/1000 µs  
Class 1: 1.5KE6.8A to 1.5KE200A or CA *  
Class 2: 1.5KE5.0A to 1.5KE180A or CA *  
Class 3: 1.5KE5.0A to 1.5KE91A or CA *  
Class 4: 1.5KE5.0A to 1.5KE43A or CA *  
Optional 100% screening for avionics grade is  
available by adding MA prefix to part number for added  
100% temperature cycle -55oC to +125oC (10X) as well  
as surge (3X) and 24 hours HTRB with post test VZ &  
IR (in the operating direction for unidirectional or both  
directions for bidirectional)  
• Secondary lightning protection per IEC61000-4-5 with  
12 Ohms source impedance:  
•
•
Options for screening in accordance with MIL-PRF-  
19500 for JANTX are also available by adding MX  
prefix to the part number.  
Class 1 : 1.5KE5.0A to 1.5KE110A or CA *  
Class 2: 1.5KE5.0A to 1.5KE56A or CA *  
Class 3: 1.5KE5.0A to 1.5KE27A or CA *  
Class 4: 1.5KE5.0A to 1.5KE13A or CA *  
Surface mount equivalent packages are available as  
SMCJ5.0 - SMCJ170CA or SMCG5.0 - SMCG170CA  
(consult factory for other surface mount options)  
• Secondary lightning protection per IEC61000-4-5 with  
2 Ohms source impedance:  
•
•
Moisture classification is Level 1 with no dry pack  
required per IPC/JEDEC J-STD-020B  
Class 2: 1.5KE5.0A to 1.5KE24A or CA *  
Class 3: 1.5KE5.0 to 1.5KE12A or CA *  
RoHS Compliant devices available by adding “e3” suffix  
* Also applies to 1N5908 and 1Nxxxx of same voltage  
MAXIMUM RATINGS  
MECHANICAL AND PACKAGING  
•
Peak Pulse Power dissipation at 25ºC: 1500 watts at  
•
•
•
CASE: Void-free transfer molded thermosetting  
epoxy body meeting UL94V-0  
10/1000 μs (also see Fig 1,2, and 3)  
•
•
Impulse repetition rate (duty factor): 0.01%  
FINISH: Tin-lead or RoHS Compliant matte-Tin  
plating solderable per MIL-STD-750, method 2026  
t
clamping (0 volts to V(BR) min.): < 100 ps theoretical for  
unidirectional and < 5 ns for bidirectional  
Operating and Storage temperature: -65ºC to +150ºC  
POLARITY: Cathode indicated by band. No  
marking on bidirectional devices  
•
•
Thermal Resistance: 22ºC/W junction to lead at 3/8 inch  
(10 mm) from body, or 82ºC/W junction to ambient when  
mounted on FR4 PC board with 4 mm2 copper pads  
(1oz) and track width 1 mm, length 25 mm  
Steady-State Power dissipation: 5 watts at TL = 40oC,  
or 1.52 watts at TA = 25ºC when mounted on FR4 PC  
board described for thermal resistance  
•
•
MARKING: Part number  
TAPE & REEL option: Standard per EIA-296 (add  
“TR” suffix to part number)  
•
•
WEIGHT: 1.5 grams (approximate)  
See package dimensions on last page  
•
•
•
Forward Surge: 200 Amps peak impulse of 8.3 ms half-  
sine wave at 25ºC (unidirectional only)  
Solder temperatures: 260 ºC for 10 s (maximum)  
Copyright © 2009  
11-03-2009 Rev G; SA4-15  
Microsemi  
Page 1  
Scottsdale Division  
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503  
12345

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MA1N6295E3 MICROSEMI

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MA1N6295E3TR MICROSEMI

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 		Trans Voltage Suppressor Diode, 1500W, 81V V(RWM), Unidirectional, 1 Element, Silicon, ROH
MA1N6295TR MICROSEMI

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MA1N6296 MICROSEMI

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 		Trans Voltage Suppressor Diode, 1500W, 89.2V V(RWM), Unidirectional, 1 Element, Silicon, P
MA1N6296AE3 MICROSEMI

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 		Trans Voltage Suppressor Diode, 1500W, 94V V(RWM), Unidirectional, 1 Element, Silicon, ROH
MA1N6296AE3TR MICROSEMI

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 		Trans Voltage Suppressor Diode, 1500W, 94V V(RWM), Unidirectional, 1 Element, Silicon, ROH
MA1N6296ATR MICROSEMI

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 		Trans Voltage Suppressor Diode, 1500W, 94V V(RWM), Unidirectional, 1 Element, Silicon, PLA
MA1N6296E3 MICROSEMI

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 		Trans Voltage Suppressor Diode, 1500W, 89.2V V(RWM), Unidirectional, 1 Element, Silicon, R

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