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MA123

更新时间: 2024-01-23 06:29:10
品牌 Logo 应用领域
松下 - PANASONIC /
页数 文件大小 规格书
3页 80K
描述
Silicon epitaxial planar type

MA123 技术参数

生命周期:Obsolete包装说明:R-PDSO-G6
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.70风险等级:5.84
配置:2 BANKS, COMMON CATHODE, 2 ELEMENTS二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):1.2 V
JESD-30 代码:R-PDSO-G6元件数量:4
端子数量:6最高工作温度:150 °C
最大输出电流:0.1 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
最大功率耗散:0.3 W认证状态:Not Qualified
最大反向恢复时间:0.003 µs表面贴装:YES
端子形式:GULL WING端子位置:DUAL

MA123 数据手册

 浏览型号MA123的Datasheet PDF文件第2页浏览型号MA123的Datasheet PDF文件第3页 
Switching Diodes  
MA6X123 (MA123)  
Silicon epitaxial planar type  
Unit : mm  
For switching circuit  
+0.20  
–0.05  
1.9 0.1  
(0.95) (0.95)  
2.90  
+0.10  
0.16  
–0.06  
I Features  
4
5
6
Four-element contained in one package, allowing high-density  
mounting  
3
2
1
Centrosymmetrical wiring, allowing to free from the taping direc-  
tion  
+0.10  
–0.05  
0.30  
Short reverse recovery time trr  
Small terminal capacitance, Ct  
10°  
I Absolute Maximum Ratings Ta = 25°C  
Parameter  
Reverse voltage (DC)  
Peak reverse voltage  
Average forward current*  
Symbol  
VR  
Rating  
80  
Unit  
V
1 : Anode 1  
2 : Anode 2  
3 : Cathode 3,4  
4 : Anode 3  
5 : Anode 2  
6 : Cathode 1,2  
Mini6-G2 Package  
VRM  
IF  
80  
V
1
100  
225  
500  
mA  
mA  
mA  
1
Peak forward current*  
IFM  
Marking Symbol: M2B  
Internal Connection  
Non-repetitive peak forward  
IFSM  
1,2  
surge current*  
Junction temperature  
Storage temperature  
Tj  
150  
°C  
°C  
Tstg  
55 to +150  
6
5
4
1
2
3
1
2
Note)  
*
*
: Value for single diode  
: t = 1 s  
I Electrical Characteristics Ta = 25°C  
Parameter  
Reverse current (DC)  
Forward voltage (DC)  
Reverse voltage (DC)  
Terminal capacitance  
Reverse recovery time*  
Symbol  
IR  
Conditions  
Min  
80  
Typ  
Max  
100  
1.2  
Unit  
nA  
V
VR = 75 V  
VF  
IF = 100 mA  
IR = 100 µA  
VR  
V
Ct  
VR = 0 V, f = 1 MHz  
2
3
pF  
ns  
trr  
IF = 10 mA, VR = 6 V  
Irr = 0.1 · IR, RL = 100 Ω  
Note) 1. Rated input/output frequency: 100 MHz  
2. * : trr measuring circuit  
Bias Application Unit N-50BU  
Input Pulse  
tp  
Output Pulse  
trr  
tr  
t
10%  
IF  
t
A
90%  
VR  
Irr = 0.1 · IR  
tp = 2 µs  
tr = 0.35 ns  
δ = 0.05  
IF = 10 mA  
VR = 6 V  
Pulse Generator  
(PG-10N)  
W.F.Analyzer  
(SAS-8130)  
RL = 100 Ω  
Rs = 50 Ω  
Ri = 50 Ω  
Note) The part number in the parenthesis shows conventional part number.  
109  

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