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M95320-DRMN3T/K PDF预览

M95320-DRMN3T/K

更新时间: 2024-12-01 08:05:23
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 可编程只读存储器电动程控只读存储器电可擦编程只读存储器时钟光电二极管内存集成电路
页数 文件大小 规格书
39页 351K
描述
4KX8 SPI BUS SERIAL EEPROM, PDSO8, 0.150 INCH, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, SON-8

M95320-DRMN3T/K 技术参数

是否Rohs认证: 符合生命周期:Active
零件包装代码:SON包装说明:0.150 INCH, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, SON-8
针数:8Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8542.32.00.51
风险等级:5.12最大时钟频率 (fCLK):5 MHz
JESD-30 代码:R-PDSO-G8长度:4.9 mm
内存密度:32768 bit内存集成电路类型:EEPROM
内存宽度:8功能数量:1
端子数量:8字数:4096 words
字数代码:4000工作模式:SYNCHRONOUS
最高工作温度:125 °C最低工作温度:-40 °C
组织:4KX8封装主体材料:PLASTIC/EPOXY
封装代码:SOP封装形状:RECTANGULAR
封装形式:SMALL OUTLINE并行/串行:SERIAL
峰值回流温度(摄氏度):NOT SPECIFIED座面最大高度:1.75 mm
串行总线类型:SPI最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):1.8 V标称供电电压 (Vsup):5 V
表面贴装:YES技术:CMOS
温度等级:AUTOMOTIVE端子形式:GULL WING
端子节距:1.27 mm端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED宽度:3.9 mm
最长写入周期时间 (tWC):4 msBase Number Matches:1

M95320-DRMN3T/K 数据手册

 浏览型号M95320-DRMN3T/K的Datasheet PDF文件第2页浏览型号M95320-DRMN3T/K的Datasheet PDF文件第3页浏览型号M95320-DRMN3T/K的Datasheet PDF文件第4页浏览型号M95320-DRMN3T/K的Datasheet PDF文件第5页浏览型号M95320-DRMN3T/K的Datasheet PDF文件第6页浏览型号M95320-DRMN3T/K的Datasheet PDF文件第7页 
M95320-A125  
M95320-A145  
Automotive 32-Kbit serial SPI bus EEPROMs with high-speed clock  
Datasheet preliminary data  
Features  
Compatible with the Serial Peripheral Interface  
(SPI) bus  
Memory array  
SO8 (MN)  
150 mil width  
– 32 Kbits (4 Kbytes) of EEPROM  
– Page size: 32 bytes  
– Write protection by block: 1/4, 1/2 or whole  
memory  
– Additional Write lockable Page  
(Identification page)  
TSSOP8 (DW)  
169 mil width  
Extended temperature and voltage ranges  
– Up to 125 °C: 1.8 V to 5.5 V  
– Up to 145 °C: 2.5 V to 5.5 V  
High speed clock frequency  
– 20 MHz for V  
– 10 MHz for V  
4.5 V  
2.5 V  
CC ≥  
CC ≥  
– 5 MHz for V  
1.8 V  
CC ≥  
UFDFPN8 (MC)  
2 x 3 mm  
Schmitt trigger inputs for noise filtering  
Short Write cycle time  
– Byte Write within 4 ms  
– Page Write within 4 ms  
Write cycle endurance  
– 4 million Write cycles at 25 °C  
– 1.2 million Write cycles at 85 °C  
– 600 k Write cycles at 125 °C  
– 400 k Write cycles at 145 °C  
Data retention  
– 40 years at 55 °C  
– 100 years at 25 °C  
ESD Protection (Human Body Model)  
– 4000 V  
Packages  
– RoHS-compliant and halogen-free  
®
(ECOPACK2 )  
March 2012  
Doc ID 022938 Rev 1  
1/39  
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to  
change without notice.  
www.st.com  
1

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