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M95080-VMN5 PDF预览

M95080-VMN5

更新时间： 2024-02-25 23:36:03
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 可编程只读存储器电动程控只读存储器电可擦编程只读存储器光电二极管
页数 文件大小 规格书
21页 179K
描述
1KX8 SPI BUS SERIAL EEPROM, PDSO8, 0.150 INCH, PLASTIC, SO-8

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M95080-VMN5 技术参数

生命周期：Obsolete零件包装代码：SOIC
包装说明：SOP,针数：8
Reach Compliance Code：unknownECCN代码：EAR99
HTS代码：8542.32.00.51风险等级：5.66
JESD-30 代码：R-PDSO-G8长度：4.9 mm
内存密度：8192 bit内存集成电路类型：EEPROM
内存宽度：8功能数量：1
端子数量：8字数：1024 words
字数代码：1000工作模式：SYNCHRONOUS
最高工作温度：85 °C最低工作温度：-20 °C
组织：1KX8封装主体材料：PLASTIC/EPOXY
封装代码：SOP封装形状：RECTANGULAR
封装形式：SMALL OUTLINE并行/串行：SERIAL
认证状态：Not Qualified座面最大高度：1.75 mm
串行总线类型：SPI最大供电电压 (Vsup)：5.5 V
最小供电电压 (Vsup)：2.7 V标称供电电压 (Vsup)：3.3 V
表面贴装：YES技术：CMOS
温度等级：OTHER端子形式：GULL WING
端子节距：1.27 mm端子位置：DUAL
宽度：3.9 mmBase Number Matches：1

M95080-VMN5 数据手册

 浏览型号M95080-VMN5的Datasheet PDF文件第1页浏览型号M95080-VMN5的Datasheet PDF文件第3页浏览型号M95080-VMN5的Datasheet PDF文件第4页浏览型号M95080-VMN5的Datasheet PDF文件第5页浏览型号M95080-VMN5的Datasheet PDF文件第6页浏览型号M95080-VMN5的Datasheet PDF文件第7页 
M95640, M95320, M95160, M95080  
Figure 2A. DIP Connections  
Figure 2C. TSSOP14 Connections  
M95xxx  
M95xxx  
S
Q
1
2
3
4
5
6
7
14  
13  
V
CC  
HOLD  
NC  
NC  
NC  
C
S
Q
1
2
3
4
8
V
CC  
HOLD  
NC  
NC  
NC  
W
12  
7
11  
W
6
5
C
D
10  
V
SS  
9
AI01790C  
V
8
D
SS  
AI02346B  
Note: 1. NC = Not Connected  
Figure 2B. SO8 and TSSOP8 Connections  
version of each device), and down to 1.8 V (for the  
-R version of each device).  
The M95640, M95320 and M95160, M95080 are  
available in Plastic Dual-in-Line, Plastic Small  
Outline and Thin Shrink Small Outline packages.  
Each memory device is accessed by a simple  
serial interface that is SPI bus compatible. The bus  
signals are C, D and Q, as shown in Table 1 and  
Figure 3.  
The device is selected when the chip select input  
(S) is held low. Communications with the chip can  
be interrupted using the hold input (HOLD).  
M95xxx  
S
Q
1
2
3
4
8
V
CC  
HOLD  
7
W
6
5
C
D
V
SS  
AI01791C  
1
Table 2. Absolute Maximum Ratings  
Symbol  
Parameter  
Value  
Unit  
°C  
TA  
Ambient Operating Temperature  
–40 to 125  
–65 to 150  
TSTG  
Storage Temperature  
°C  
PSDIP8: 10 sec  
SO8: 40 sec  
260  
215  
TLEAD  
Lead Temperature during Soldering  
°C  
TSSOP14: t.b.c.  
t.b.c.  
VO  
VI  
–0.3 to VCC+0.6  
–0.3 to 6.5  
–0.3 to 6.5  
4000  
Output Voltage  
Input Voltage  
Supply Voltage  
V
V
V
V
VCC  
VESD  
2
Electrostatic Discharge Voltage (Human Body model)  
Note: 1. Except for the rating “Operating Temperature Range”, stresses above those listed in the Table “Absolute Maximum Ratings” may  
cause permanent damage to the device. These are stress ratings only, and operation of the device at these or any other conditions  
above those indicated in the Operating sections of this specification is not implied. Exposure to Absolute Maximum Rating condi-  
tions for extended periods may affect device reliability. Refer also to the ST SURE Program and other relevant quality documents.  
2. JEDEC Std JESD22-A114A (C1=100 pF, R1=1500 Ω, R2=500 Ω)  
2/21  
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