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M93C46-RDW1T PDF预览

M93C46-RDW1T

更新时间: 2024-09-29 05:02:03
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 可编程只读存储器电动程控只读存储器电可擦编程只读存储器时钟光电二极管内存集成电路
页数 文件大小 规格书
19页 147K
描述
64X16 MICROWIRE BUS SERIAL EEPROM, PDSO8, 0.169 INCH, PLASTIC, TSSOP-8

M93C46-RDW1T 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:SOIC包装说明:0.169 INCH, PLASTIC, TSSOP-8
针数:8Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8542.32.00.51
风险等级:5.41其他特性:CONFIGURABLE AS 64 X 16
备用内存宽度:8最大时钟频率 (fCLK):0.5 MHz
数据保留时间-最小值:40耐久性:1000000 Write/Erase Cycles
JESD-30 代码:R-PDSO-G8JESD-609代码:e4
长度:4.4 mm内存密度:1024 bit
内存集成电路类型:EEPROM内存宽度:16
湿度敏感等级:1功能数量:1
端子数量:8字数:64 words
字数代码:64工作模式:SYNCHRONOUS
最高工作温度:70 °C最低工作温度:
组织:64X16封装主体材料:PLASTIC/EPOXY
封装代码:TSSOP封装等效代码:TSSOP8,.25
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
并行/串行:SERIAL峰值回流温度(摄氏度):260
电源:2/3.3 V认证状态:Not Qualified
座面最大高度:1.2 mm串行总线类型:MICROWIRE
最大待机电流:0.000005 A子类别:EEPROMs
最大压摆率:0.0015 mA最大供电电压 (Vsup):3.6 V
最小供电电压 (Vsup):1.8 V标称供电电压 (Vsup):2.5 V
表面贴装:YES技术:CMOS
温度等级:COMMERCIAL端子面层:Nickel/Palladium/Gold (Ni/Pd/Au)
端子形式:GULL WING端子节距:0.65 mm
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
宽度:3 mm最长写入周期时间 (tWC):10 ms
写保护:SOFTWAREBase Number Matches:1

M93C46-RDW1T 数据手册

 浏览型号M93C46-RDW1T的Datasheet PDF文件第2页浏览型号M93C46-RDW1T的Datasheet PDF文件第3页浏览型号M93C46-RDW1T的Datasheet PDF文件第4页浏览型号M93C46-RDW1T的Datasheet PDF文件第5页浏览型号M93C46-RDW1T的Datasheet PDF文件第6页浏览型号M93C46-RDW1T的Datasheet PDF文件第7页 
M93C86, M93C76, M93C66  
M93C56, M93C46, M93C06  
16K/8K/4K/2K/1K/256 (x8/x16) Serial Microwire Bus EEPROM  
INDUSTRY STANDARD MICROWIRE BUS  
1 MILLION ERASE/WRITE CYCLES, with  
40 YEARS DATA RETENTION  
DUAL ORGANIZATION: by WORD (x16) or by  
BYTE (x8)  
BYTE/WORD and ENTIRE MEMORY  
PROGRAMMING INSTRUCTIONS  
SELF-TIMED PROGRAMMING CYCLE with  
AUTO-ERASE  
8
8
1
1
PSDIP8 (BN)  
0.25mm Frame  
SO8 (MN)  
150mil Width  
READY/BUSY SIGNAL DURING  
PROGRAMMING  
SINGLE SUPPLY VOLTAGE:  
– 4.5V to 5.5V for M93Cx6 version  
– 2.5V to 5.5V for M93Cx6-W version  
– 1.8V to 3.6V for M93Cx6-R version  
SEQUENTIAL READ OPERATION  
5ms TYPICAL PROGRAMMING TIME  
8
1
TSSOP8 (DW)  
169mil Width  
ENHANCED ESD/LATCH-UP  
PERFORMANCES  
DESCRIPTION  
Figure 1. Logic Diagram  
This M93C86/C76/C66/C56/C46/C06 specifica-  
tion covers a range of 16K/8K/4K/2K/1K/256 bit  
serial EEPROM products respectively. In this text,  
products are referred to as M93Cx6. The M93Cx6  
is an Electrically Erasable Programmable Memory  
(EEPROM) fabricated with STMicroelectronics’s  
High Endurance Single Polysilicon CMOS technol-  
ogy. The M93Cx6 memory is accessed through a  
serial input (D) and output (Q) using the MI-  
CROWIRE bus protocol.  
V
CC  
D
Q
C
S
Table 1. Signal Names  
M93Cx6  
S
Chip Select Input  
Serial Data Input  
Serial Data Output  
Serial Clock  
D
ORG  
Q
C
V
SS  
AI01928  
ORG  
VCC  
VSS  
Organisation Select  
Supply Voltage  
Ground  
February 1999  
1/19  

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