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M93C46-RBN1 PDF预览

M93C46-RBN1

更新时间: 2024-11-17 10:02:31
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 可编程只读存储器电动程控只读存储器电可擦编程只读存储器光电二极管
页数 文件大小 规格书
19页 147K
描述
64X16 MICROWIRE BUS SERIAL EEPROM, PDIP8, PLASTIC, SDIP-8

M93C46-RBN1 数据手册

 浏览型号M93C46-RBN1的Datasheet PDF文件第2页浏览型号M93C46-RBN1的Datasheet PDF文件第3页浏览型号M93C46-RBN1的Datasheet PDF文件第4页浏览型号M93C46-RBN1的Datasheet PDF文件第5页浏览型号M93C46-RBN1的Datasheet PDF文件第6页浏览型号M93C46-RBN1的Datasheet PDF文件第7页 
M93C86, M93C76, M93C66  
M93C56, M93C46, M93C06  
16K/8K/4K/2K/1K/256 (x8/x16) Serial Microwire Bus EEPROM  
INDUSTRY STANDARD MICROWIRE BUS  
1 MILLION ERASE/WRITE CYCLES, with  
40 YEARS DATA RETENTION  
DUAL ORGANIZATION: by WORD (x16) or by  
BYTE (x8)  
BYTE/WORD and ENTIRE MEMORY  
PROGRAMMING INSTRUCTIONS  
SELF-TIMED PROGRAMMING CYCLE with  
AUTO-ERASE  
8
8
1
1
PSDIP8 (BN)  
0.25mm Frame  
SO8 (MN)  
150mil Width  
READY/BUSY SIGNAL DURING  
PROGRAMMING  
SINGLE SUPPLY VOLTAGE:  
– 4.5V to 5.5V for M93Cx6 version  
– 2.5V to 5.5V for M93Cx6-W version  
– 1.8V to 3.6V for M93Cx6-R version  
SEQUENTIAL READ OPERATION  
5ms TYPICAL PROGRAMMING TIME  
8
1
TSSOP8 (DW)  
169mil Width  
ENHANCED ESD/LATCH-UP  
PERFORMANCES  
DESCRIPTION  
Figure 1. Logic Diagram  
This M93C86/C76/C66/C56/C46/C06 specifica-  
tion covers a range of 16K/8K/4K/2K/1K/256 bit  
serial EEPROM products respectively. In this text,  
products are referred to as M93Cx6. The M93Cx6  
is an Electrically Erasable Programmable Memory  
(EEPROM) fabricated with STMicroelectronics’s  
High Endurance Single Polysilicon CMOS technol-  
ogy. The M93Cx6 memory is accessed through a  
serial input (D) and output (Q) using the MI-  
CROWIRE bus protocol.  
V
CC  
D
Q
C
S
Table 1. Signal Names  
M93Cx6  
S
Chip Select Input  
Serial Data Input  
Serial Data Output  
Serial Clock  
D
ORG  
Q
C
V
SS  
AI01928  
ORG  
VCC  
VSS  
Organisation Select  
Supply Voltage  
Ground  
February 1999  
1/19  

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