Datasheet > M81721FP

M81721FP

更新时间： 2024-09-19 05:47:23

品牌	Logo	应用领域
三菱 - MITSUBISHI		驱动器高压
页数	文件大小	规格书
10页	101K
描述
600V HIGH VOLTAGE HALF BRIDGE DRIVER

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中文翻译

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数据手册

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M81721FP 数据手册

MITSUBISHI SEMICONDUCTORS <HVIC>

M81721FP

600V HIGH VOLTAGE HALF BRIDGE DRIVER

DESCRIPTION

M81721FP is high voltage Power MOSFET and IGBT gate

driver for half bridge applications.

PIN CONFIGURATION (TOP VIEW)

FEATURES

HIN

¡Floating supply voltage up to 600V

¡Low quiescent power supply current

¡Separate sink and source current output up to 1A (typ)

LIN

HPOUT

HNOUT1

HNOUT2

FO_RST

CIN

¡Active Miller effect clamp NMOS with sink current up to –1A(typ)

¡Input noise filters

¡Over-current detection and output shutdown

¡High side under voltage lockout

¡FO pin which can input and output Fault signals to commu-

nicate with controllers and synchronize the shut down with

other phases

GND

VCC

LPOUT

LNOUT1

LNOUT2

¡24-Lead SSOP PACKAGE

APPLICATIONS

Power MOSFET and IGBT gate driver for Medium and Mi-

cro inverter or general purpose.

Outline: 24P2Q

BLOCK DIAGRAM

GND

HPOUT

HNOUT1

HNOUT2

Logic

Filter

VCC

Vreg

Vref

Pulse

Generator

VREG

HIN

LIN

Interlock

& Noise Filter

LPOUT

LNOUT1

LNOUT2

Protection

Logic

–

CIN

Vref

VNO

Filter

FO_RST

Filter

Aug. 2009

12 3 4 5 6 7...10

中文翻译

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