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M5M5V108CKV-10HI PDF预览

M5M5V108CKV-10HI

更新时间: 2024-11-30 22:28:35
品牌 Logo 应用领域
三菱 - MITSUBISHI /
页数 文件大小 规格书
7页 89K
描述
1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM

M5M5V108CKV-10HI 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:TSOP包装说明:TSOP1, TSSOP32,.56,20
针数:32Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8542.32.00.41
风险等级:5.85最长访问时间:100 ns
I/O 类型:COMMONJESD-30 代码:R-PDSO-G32
JESD-609代码:e0长度:11.8 mm
内存密度:1048576 bit内存集成电路类型:STANDARD SRAM
内存宽度:8功能数量:1
端子数量:32字数:131072 words
字数代码:128000工作模式:ASYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:128KX8输出特性:3-STATE
封装主体材料:PLASTIC/EPOXY封装代码:TSOP1
封装等效代码:TSSOP32,.56,20封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, THIN PROFILE并行/串行:PARALLEL
峰值回流温度(摄氏度):NOT SPECIFIED电源:3/3.3 V
认证状态:Not Qualified座面最大高度:1.2 mm
最大待机电流:0.00002 A最小待机电流:2 V
子类别:SRAMs最大压摆率:0.03 mA
最大供电电压 (Vsup):3.6 V最小供电电压 (Vsup):2.7 V
标称供电电压 (Vsup):3 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子面层:Tin/Lead (Sn/Pb)端子形式:GULL WING
端子节距:0.5 mm端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED宽度:8 mm
Base Number Matches:1

M5M5V108CKV-10HI 数据手册

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MITSUBISHI LSIs  
M5M5V108CFP,VP,RV,KV,KR -70HI, -10HI,  
-70XI, -10XI  
1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM  
DESCRIPTION  
The M5M5V108CFP,VP,RV,KV,KR are  
PIN CONFIGURATION (TOP VIEW)  
a 1048576-bit CMOS  
static RAM organized as 131072 word by 8-bit which are  
fabricated using high-performance quadruple-polysilicon and  
double metal CMOS technology. The use of thin film transistor  
(TFT) load cells and CMOS periphery result in a high density and  
low power static RAM.  
NC  
A16  
A14  
A12  
A7  
1
2
32  
31  
30  
29  
VCC  
A15  
S2  
ADDRESS  
INPUT  
CHIP SELECT  
INPUT  
WRITE CONTROL  
INPUT  
3
4
W
They are low standby current and low operation current and ideal  
for the battery back-up application.  
5
28 A13  
27  
A6  
6
A8  
ADDRESS  
INPUTS  
The M5M5V108CVP,RV,KV,KR are packaged in a 32-pin thin  
small outline package which is a high reliability and high density  
surface mount device(SMD). Two types of devices are available.  
M5M5V108CVP,KV(normal lead bend type package),  
M5M5V108CRV,KR(reverse lead bend type package).Using both  
types of devices, it becomes very easy to design a printed circuit  
board.  
ADDRESS  
INPUTS  
A5  
7
26 A9  
A4  
8
25 A11  
OUTPUT ENABLE  
A3  
9
24 OE INPUT  
ADDRESS  
INPUT  
CHIP SELECT  
INPUT  
A2  
10  
11  
12  
23 A10  
A1  
22  
S1  
A0  
21  
20  
DQ8  
DQ7  
DQ1 13  
DQ2  
DATA  
INPUTS/  
OUTPUTS  
DATA  
INPUTS/  
OUTPUTS  
14  
19 DQ6  
FEATURES  
DQ3 15  
GND16  
18  
DQ5  
DQ4  
Power supply current  
Access  
17  
Active  
(1MHz)  
(max)  
Type name  
VCC  
time  
stand-by  
(max)  
(max)  
Outline 32P2M-A  
70ns  
100ns  
70ns  
M5M5V108CFP,VP,RV,KV,KR-70HI  
M5M5V108CFP,VP,RV,KV,KR-10HI  
M5M5V108CFP,VP,RV,KV,KR-70XI  
M5M5V108CFP,VP,RV,KV,KR-10XI  
24µA  
A11  
A9  
1
2
3
4
5
6
7
8
9
32  
31  
30  
OE  
A10  
S1  
2.7~3.6V  
5mA  
9.6µA  
100ns  
A8  
A13  
W
29 DQ8  
Low stand-by current 0.1µA (typ.)  
Directly TTL compatible : All inputs and outputs  
28  
DQ7  
Easy memory expansion and power down by S1,S2  
Data hold on +2V power supply  
Three-state outputs : OR - tie capability  
OE prevents data contention in the I/O bus  
Common data I/O  
27  
S2  
DQ6  
A15  
VCC  
NC  
26  
25  
24  
23  
22  
21  
20  
19  
18  
17  
DQ5  
DQ4  
GND  
DQ3  
DQ2  
DQ1  
A0  
M5M5V108CVP,KV  
Package  
A16 10  
M5M5V108CFP  
···········3· 2pin 525mil SOP  
A14  
11  
M5M5V108CVP,RV ···········3· 2pin 8 X 20 mm2 TSOP  
M5M5V108CKV,KR ···········3· 2pin 8 X 13.4 mm2 TSOP  
A12  
12  
A7  
13  
A6  
14  
A1  
APPLICATION  
Small capacity memory units  
15  
A5  
A4  
A2  
16  
A3  
Outline 32P3H-E(VP), 32P3K-B(KV)  
A4  
17  
16  
15  
14  
13  
12  
11  
10  
9
A3  
A5  
18 A2  
A6  
19 A1  
A7  
20 A0  
A12  
A14  
A16  
NC  
VCC  
A15  
S2  
21 DQ1  
22  
DQ2  
23  
DQ3  
24  
GND  
M5M5V108CRV,KR  
8
25  
DQ4  
7
26  
27  
28  
29  
30  
31  
32  
DQ5  
DQ6  
DQ7  
DQ8  
S1  
6
5
W
A13  
A8  
4
3
2
A9  
A10  
A11  
1
OE  
Outline 32P3H-F(RV), 32P3K-C(KR)  
NC : NO CONNECTION  
MITSUBISHI  
ELECTRIC  
1

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