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M5M5256FP-45XL-W PDF预览

M5M5256FP-45XL-W

更新时间: 2024-11-20 22:20:31
品牌 Logo 应用领域
三菱 - MITSUBISHI /
页数 文件大小 规格书
7页 49K
描述
262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM

M5M5256FP-45XL-W 数据手册

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'97.4.7  
MITSUBISHI LSIs  
M5M5256DP,KP,FP,VP,RV -45LL-W,-55LL-W,-70LL-W,  
-45XL-W,-55XL-W,-70XL-W  
262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM  
DESCRIPTION  
PIN CONFIGURATION (TOP VIEW)  
The M5M5256DP,KP,FP,VP,RV is 262,144-bit CMOS static RAMs  
organized as 32,768-words by 8-bits which is fabricated using  
high-performance 3 polysilicon CMOS technology. The use of  
resistive load NMOS cells and CMOS periphery results in a high  
density and low power static RAM. Stand-by current is small  
enough for battery back-up application. It is ideal for the memory  
systems which require simple interface.  
A14  
A12  
Vcc  
/W  
28  
27  
26  
25  
1
2
3
A7  
A6  
A5  
A4  
A13  
A8  
4
24 A9  
5
Especially the M5M5256DVP,RV are packaged in a 28-pin thin  
small outline package.Two types of devices are available,  
M5M5256DVP(normal lead bend type package),  
M5M5256DRV(reverse lead bend type package). Using both types of  
devices, it becomes very easy to design a printed circuit board.  
A11  
23  
6
22 /OE  
7
A3  
21  
20  
19  
A2  
A1  
A0  
DQ1  
DQ2  
8
9
A10  
/S  
DQ8  
10  
11  
12  
18 DQ7  
DQ6  
DQ5  
17  
16  
15  
FEATURE  
DQ3 13  
GND  
14  
Power supply current  
Active Stand-by  
Access  
time  
DQ4  
Type  
Outline 28P4 (DP)  
(max)  
45ns  
55ns  
70ns  
(max)  
(max)  
28P4Y (DKP)  
28P2W-C (DFP)  
M5M5256DP, KP, FP,VP,RV-45LL  
M5M5256DP, KP, FP,VP,RV-55LL  
M5M5256DP, KP, FP,VP,RV-70LL  
20µA  
(Vcc=5.5V)  
A10  
21  
20  
19  
22  
23  
24A9  
25A8  
26A13  
27  
/W  
28Vcc  
1
2
3
4 A6  
5 A5  
6 A4  
7 A3  
/OE  
A11  
/S  
DQ8  
55mA  
(Vcc=5.5V)  
5µA  
(Vcc=5.5V)  
DQ7 18  
DQ6 17  
DQ5 16  
DQ415  
GND  
DQ313  
DQ2  
DQ1  
A0  
M5M5256DP, KP, FP,VP,RV-45XL  
M5M5256DP, KP, FP,VP,RV-55XL  
M5M5256DP, KP, FP,VP,RV-70XL  
45ns  
55ns  
70ns  
0.05µA  
(Vcc=3.0V,  
Typical)  
M5M5256DVP  
-W  
14  
A14  
A12  
A7  
•Single +5V power supply  
•No clocks, no refresh  
•Data-Hold on +2.0V power supply  
•Directly TTL compatible : all inputs and outputs  
•Three-state outputs : OR-tie capability  
•/OE prevents data contention in the I/O bus  
•Common Data I/O  
12  
11  
10  
9
A1  
A2 8  
Outline 28P2C-A (DVP)  
•Battery backup capability  
A2  
A1  
A0  
•Low stand-by current··········0.05µA(typ.)  
A3  
A4  
A5  
8
9
10  
7
6
5
4 A6  
DQ111  
PACKAGE  
DQ2  
DQ3  
GND  
DQ4  
DQ5  
DQ6  
3 A7  
2 A12  
1 A14  
12  
13  
M5M256DP  
M5M5256DKP  
M5M5256DFP  
: 28 pin 600 mil DIP  
: 28 pin 300 mil DIP  
14  
15  
16  
17  
18  
19  
M5M5256DRV  
-W  
Vcc  
28  
: 28 pin 450 mil SOP  
2
27 /W  
26 A13  
25 A8  
M5M5256DVP,RV : 28pin 8 X 13.4 mm TSOP  
DQ7  
DQ8  
/S 20  
A10  
APPLICATION  
A9  
A11  
/OE  
24  
23  
22  
Small capacity memory units  
21  
Outline 28P2C-B (DRV)  
MITSUBISHI  
ELECTRIC  
1

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