1997-4/1
MITSUBISHI LSIs
M5M51008BP,FP,VP,RV,KV,KR -55L,-70L,-10L,
-55LL,-70LL,-10LL-I
1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM
DESCRIPTION
PIN CONFIGURATION (TOP VIEW)
The M5M51008BP,FP,VP,RV,KV,KR are a 1048576-bit CMOS
static RAM organized as 131072 word by 8-bit which are
fabricated using high-performance triple polysilicon CMOS
technology. The use of resistive load NMOS cells and CMOS
periphery result in a high density and low power static RAM.
They are low standby current and low operation current and ideal
for the battery back-up application.
The M5M51008BVP,RV,KV,KR are packaged in a 32-pin thin
small outline package which is a high reliability and high density
surface mount device(SMD).Two types of devices are available.
VP,KV(normal lead bend type package),RV,KR(reverse lead bend
type package). Using both types of devices, it becomes very easy
to design a printed circuit board.
1
2
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
NC
A16
A14
A12
A7
VCC
A15
S2
ADDRESS
INPUT
CHIP SELECT
INPUT
WRITE CONTROL
INPUT
3
4
W
5
A13
A8
6
A6
ADDRESS
INPUTS
ADDRESS
INPUTS
7
A5
A9
8
A4
A11
OE
A10
OUTPUT ENABLE
INPUT
9
A3
ADDRESS
10
11
12
13
A2
INPUT
CHIP SELECT
INPUT
A1
S1
A0
DQ8
DQ7
DQ6
DQ5
DQ4
FEATURES
DQ1
Power supply current
DATA
INPUTS/
OUTPUTS
DATA
INPUTS/
OUTPUTS
Access time
(max)
DQ2 14
Active
(1MHz)
(max)
Type name
stand-by
(max)
15
DQ3
16
GND
M5M51008BP,FP,VP,RV,KV,KR-55L
M5M51008BP,FP,VP,RV,KV,KR-70L
M5M51008BP,FP,VP,RV,KV,KR-10L
M5M51008BP,FP,VP,RV,KV,KR-55LL
M5M51008BP,FP,VP,RV,KV,KR-70LL
M5M51008BP,FP,VP,RV,KV,KR-10LL
55ns
70ns
200µA
15mA
15mA
Outline 32P4(P), 32P2M-A(FP)
(Vcc=5.5V)
100ns
55ns
40µA
(Vcc=5.5V)
1
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
A11
OE
A10
S1
70ns
2
A9
0.3µA
(Vcc=3.0V,typ)
100ns
3
A8
4
A13
DQ8
DQ7
DQ6
DQ5
DQ4
GND
DQ3
DQ2
DQ1
A0
Single +5V power supply
Low stand-by current 0.3µA (typ.)
5
W
6
S2
Directly TTL compatible : All inputs and outputs
Easy memory expansion and power down by S1,S2
Data hold on +2V power supply
Three-state outputs : OR - tie capability
OE prevents data contention in the I/O bus
Common data I/O
7
A15
8
VCC
M5M51008BVP,KV-I
9
NC
10
A16
11
A14
12
Package
A12
M5M51008BP
M5M51008BFP
M5M51008BVP,RV ···········3·2pin 8 X 20 mm2 TSOP
M5M51008BKV,KR ···········3· 2pin 8 X 13.4 mm2 TSOP
···········3· 2pin 600mil DIP
···········3· 2pin 525mil SOP
13
A7
14
A6
A1
15
A5
A2
16
A4
A3
APPLICATION
Small capacity memory units
Outline 32P3H-E(VP), 32P3K-B(KV)
A4
A5
A6
A7
17
18
19
20
21
22
23
16
15
14
13
A3
A2
A1
A0
A12 12
A14 11
DQ1
DQ2
DQ3
GND
DQ4
DQ5
DQ6
DQ7
DQ8
S1
A16
NC
VCC
A15
S2
10
9
24
M5M51008BRV,KR-I
8
25
26
27
28
29
30
31
32
7
6
5
W
4
A13
A8
3
2
A9
A10
OE
1
A11
Outline 32P3H-F(RV), 32P3K-C(KR)
NC : NO CONNECTION
1
MITSUBISHI
ELECTRIC