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M5M417400CJ-7T PDF预览

M5M417400CJ-7T

更新时间: 2024-01-24 10:14:41
品牌 Logo 应用领域
三菱 - MITSUBISHI /
页数 文件大小 规格书
22页 640K
描述
Fast Page DRAM, 4MX4, 70ns, CMOS, PDSO24, 0.300 INCH, 1.27 MM PITCH, PLASTIC, SOJ-26/24

M5M417400CJ-7T 技术参数

生命周期:Obsolete零件包装代码:SOJ
包装说明:SOJ,针数:24
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8542.32.00.02风险等级:5.43
访问模式:FAST PAGE最长访问时间:70 ns
其他特性:RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESHJESD-30 代码:R-PDSO-J24
长度:17.14 mm内存密度:16777216 bit
内存集成电路类型:FAST PAGE DRAM内存宽度:4
功能数量:1端口数量:1
端子数量:24字数:4194304 words
字数代码:4000000工作模式:ASYNCHRONOUS
最高工作温度:70 °C最低工作温度:
组织:4MX4输出特性:3-STATE
封装主体材料:PLASTIC/EPOXY封装代码:SOJ
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
认证状态:Not Qualified刷新周期:2048
座面最大高度:3.55 mm最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):4.5 V标称供电电压 (Vsup):5 V
表面贴装:YES技术:CMOS
温度等级:COMMERCIAL端子形式:J BEND
端子节距:1.27 mm端子位置:DUAL
宽度:7.62 mmBase Number Matches:1

M5M417400CJ-7T 数据手册

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MITSUBISHI LSIs  
M5M417400CJ,TP-5,-6,-7,-5S,-6S,-7S  
FAST PAGE MODE 16777216-BIT (4194304-WORD BY 4-BIT) DYNAMIC RAM  
Write Cycle (Early Write and Delayed Write)  
Limits  
Symbol  
Parameter  
M5M417400C-5,-5S  
M5M417400C-6,-6S  
M5M417400C-7,-7S  
Unit  
Min  
90  
Max  
Min  
110  
Max  
Min  
130  
Max  
t
t
t
t
t
t
t
t
t
t
t
t
t
Write cycle time  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
WC  
RAS low pulse width  
CAS low pulse width  
50  
13  
50  
13  
0
10000  
10000  
60  
15  
60  
15  
0
10000  
10000  
70  
20  
70  
20  
0
10000  
10000  
RAS  
CAS  
CSH  
RSH  
WCS  
WCH  
CWL  
RWL  
WP  
CAS hold time after RAS low  
RAS hold time after CAS low  
Write setup time before CAS low  
Write hold time after CAS low  
CAS hold time after W low  
(Note 22)  
8
10  
15  
15  
10  
0
10  
20  
20  
10  
0
13  
13  
8
RAS hold time after W low  
Write pulse width  
Data setup time before CAS low or W low  
Data hold time after CAS low or W low  
OE hold time after W low  
0
DS  
8
10  
15  
15  
20  
DH  
13  
OEH  
Read-Write and Read-Modify-Write Cycles  
Limits  
M5M417400C-6,-6S  
Symbol  
Parameter  
M5M417400C-5,-5S  
M5M417400C-7,-7S  
Unit  
Min  
131  
Max  
Min  
155  
Max  
Min  
180  
Max  
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
Read write/read modify write cycle time  
RAS low pulse width  
(Note 21)  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
RWC  
91  
54  
91  
54  
0
10000  
10000  
105  
60  
105  
60  
0
10000  
10000  
120  
70  
120  
70  
0
10000  
10000  
RAS  
CAS  
CSH  
RSH  
RCS  
CWD  
RWD  
AWD  
CWL  
RWL  
WP  
CAS low pulse width  
CAS hold time after RAS low  
RAS hold time after CAS low  
Read setup time before CAS low  
Delay time, CAS low to W low  
Delay time, RAS low to W low  
Delay time, address to W low  
CAS hold time after W low  
RAS hold time after W low  
Write pulse width  
(Note 22)  
(Note 22)  
(Note 22)  
36  
73  
48  
13  
13  
8
40  
85  
55  
15  
15  
10  
0
45  
95  
60  
20  
20  
10  
0
Data setup time before W low  
Data hold time after W low  
OE hold time after W low  
0
DS  
8
10  
15  
15  
15  
DH  
13  
OEH  
Note 21:  
Note 22:  
t
t
is specified as t  
= t  
+ t  
+ t  
+ t  
+ 5t .  
RP(min) T  
RWC  
RWC(min)  
RAC(max)  
ODD(min)  
RWL(min)  
, t  
, t  
and t  
and, t  
are specified as reference points only. If t  
t the cycle is an early write cycle and the DQ pins will remain high impedance  
WCS(min)  
WCS CWD RWD  
AWD  
CPWD  
WCS  
throughout the entire cycle. If t  
t  
, t  
t  
, t  
t and tCPWD t  
AWD(min)  
(for fast page mode cycle only), the cycle is a read-modify-write  
CPWD(min)  
CWD  
CWD(min) RWD  
RWD(min) AWD  
cycle and the DQ will contain the data read from the selected address. If neither of the above condition (delayed write) of the DQ (at access time and until CAS or OE goes  
back to V ) is indeterminate.  
IH  
6

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