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M5M416100CJ-6 PDF预览

M5M416100CJ-6

更新时间: 2024-01-30 02:23:56
品牌 Logo 应用领域
三菱 - MITSUBISHI 动态存储器光电二极管内存集成电路
页数 文件大小 规格书
21页 173K
描述
Fast Page DRAM, 16MX1, 60ns, CMOS, PDSO24, 0.300 INCH, SOJ-26/24

M5M416100CJ-6 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:SOJ包装说明:SOJ, SOJ24/26,.34
针数:24Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8542.32.00.02
风险等级:5.91访问模式:FAST PAGE
最长访问时间:60 ns其他特性:RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH
I/O 类型:SEPARATEJESD-30 代码:R-PDSO-J24
JESD-609代码:e0长度:17.14 mm
内存密度:16777216 bit内存集成电路类型:FAST PAGE DRAM
内存宽度:1功能数量:1
端口数量:1端子数量:24
字数:16777216 words字数代码:16000000
工作模式:ASYNCHRONOUS最高工作温度:70 °C
最低工作温度:组织:16MX1
输出特性:3-STATE封装主体材料:PLASTIC/EPOXY
封装代码:SOJ封装等效代码:SOJ24/26,.34
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED电源:5 V
认证状态:Not Qualified刷新周期:4096
座面最大高度:3.55 mm自我刷新:YES
最大待机电流:0.0005 A子类别:DRAMs
最大压摆率:0.09 mA最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):4.5 V标称供电电压 (Vsup):5 V
表面贴装:YES技术:CMOS
温度等级:COMMERCIAL端子面层:Tin/Lead (Sn/Pb)
端子形式:J BEND端子节距:1.27 mm
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
宽度:7.62 mm

M5M416100CJ-6 数据手册

 浏览型号M5M416100CJ-6的Datasheet PDF文件第2页浏览型号M5M416100CJ-6的Datasheet PDF文件第3页浏览型号M5M416100CJ-6的Datasheet PDF文件第4页浏览型号M5M416100CJ-6的Datasheet PDF文件第6页浏览型号M5M416100CJ-6的Datasheet PDF文件第7页浏览型号M5M416100CJ-6的Datasheet PDF文件第8页 
MITSUBISHI LSIs  
M5M416100C J,TP -5, -6, -7, -5S, -6S, -7S  
FAST PAGE MODE 16777216-BIT ( 16777216-WORD BY 1-BIT ) DYNAMIC RAM  
Read and Refresh Cycles  
Limits  
M5M416100C-5,-5S M5M416100C-6,-6S M5M416100C-7,-7S  
Symbol  
Parameter  
Unit  
Min  
90  
50  
13  
50  
13  
0
Max  
Min  
110  
60  
15  
60  
15  
0
Max  
Min  
130  
70  
20  
70  
20  
0
Max  
Read cycle time  
tRC  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
RAS low pulse width  
10000  
10000  
10000  
10000  
10000  
10000  
tRAS  
tCAS  
tCSH  
tRSH  
tRCS  
tRCH  
tRRH  
tRAL  
CAS low pulse width  
CAS hold time after RAS low  
RAS hold time after CAS low  
Read Setup time after CAS high  
Read hold time after CAS low  
Read hold time after RAS low  
Column address to RAS hold time  
0
0
0
(Note 18)  
(Note 18)  
10  
25  
10  
30  
10  
35  
Note 18: Either tRCH or tRRH must be satisfied for a read cycle.  
Write Cycle (Early Write and Delayed Write)  
Limits  
M5M416100C-5,-5S M5M416100C-6,-6S M5M416100C-7,-7S  
Symbol  
Parameter  
Unit  
Min  
90  
50  
13  
50  
13  
0
Max  
Min  
110  
60  
15  
60  
15  
0
Max  
Min  
130  
70  
20  
70  
20  
0
Max  
Write cycle time  
tWC  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
RAS low pulse width  
10000  
10000  
10000  
10000  
10000  
10000  
tRAS  
tCAS  
tCSH  
tRSH  
tWCS  
tWCH  
tCWL  
tRWL  
tWP  
CAS low pulse width  
CAS hold time after RAS low  
RAS hold time after CAS low  
Write setup time before CAS low  
(Note 20)  
8
10  
15  
15  
10  
0
10  
20  
20  
10  
0
Write hold time after CAS low  
CAS hold time after W low  
13  
13  
8
RAS hold time after W low  
Write pulse width  
tDS  
0
Data setup time before CAS low or W low  
Data hold time after CAS low or W low  
tDH  
8
10  
15  
Challenging to LowCost &  
HighPerformance  
MITSUBISHI  
ELECTRIC  
5
DRAM  
DRAM  
Oct. 1997  

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