Datasheet > M5M29WB160BVP

M5M29WB160BVP

更新时间： 2022-04-23 23:00:11

品牌	Logo	应用领域
三菱 - MITSUBISHI		闪存
页数	文件大小	规格书
25页	230K
描述
16,777,216-BIT (2097,152-WORD BY 8-BIT / 1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY

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M5M29WB160BVP 数据手册

MITSUBISHI LSIs

M5M29GB/T160BVP-80

16,777,216-BIT (2097,152-WORD BY 8-BIT / 1048,576-WORD BY16-BIT)

CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY

BUS OPERATIONS

Bus Operations for Word-Wide Mode

Pins

CE#

OE#

WE#

RP#

DQ0-15

RY/BY#

Mode

Array

VIL

VIH

VIL

VIH

VIL

Data out

Status Register Data

Lock Bit Data (DQ6)

Identifier Code

Hi-Z

VOH (Hi-Z)

Read

Status Register

Lock Bit Status

Identifier Code

VOH (Hi-Z)

Output disable

Stand by

VIH

Hi-Z

Program

VIL

Command/Data in

Command

Write

Erase

Others

Deep Power Down

Command

VOH (Hi-Z)

Hi-Z

Bus Operations for Byte-Wide Mode

Pins

CE#

OE#

WE#

VIH

RP#

RY/BY#

DQ0-7

Mode

Array

VOH (Hi-Z)

VIL

VIH

Data out

Read

Status Register

Lock Bit Status

Identifier Code

Status Register Data

Lock Bit Data (DQ6)

VIH

VOH (Hi-Z)

Identifier Code

Hi-Z

Output disable

Stand by

Hi-Z

VIH

VIL

Program

VIH

VIL

Command/Data in

Write

Erase

Others

VIH

Command

VOH (Hi-Z)

Deep Power Down

VIL

Hi-Z

1) X at RY/BY# is VOL or VOH(Hi-Z).

*The RY/BY# is an open drain output pin and indicates status of the internal WSM. When low,it indicates that the WSM is Busy performing an operation.

A pull-up resistor of 10K-100K Ohms is required to allow the RY/BY# signal to transition high indicating a Ready WSM condition.

2) X can be VIH or VIL for control pins.

Sep 1999. Rev2.0

1...4 5 678 9 10...25

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